A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps

G. Sun; Richard A. Soref; Jacob B. Khurgin

doi:10.1016/j.mejo.2005.02.001

A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps

G. Sun
, Richard A. Soref
, Jacob B. Khurgin

Engineering

Air Force Research Laboratory
Johns Hopkins University

Research output: Contribution to journal › Conference article › peer-review

Abstract

We propose the idea of making quantum dot (QD) lasers by embedding direct-bandgap QDs in a short-period superlattice whose bandgap is indirect. In comparison with similar QD lasers with barriers of direct band gap, this technique not only reduces the temperature dependence of threshold current, but also leads to extremely small linewidth enhancement factor, making low-temperature sensitivity, low chirp, and narrow linewidth semiconductor lasers feasible.

Original language	English
Pages (from-to)	183-185
Number of pages	3
Journal	Microelectronics
Volume	36
Issue number	3-6
DOIs	https://doi.org/10.1016/j.mejo.2005.02.001
State	Published - Mar 2005

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Keywords

Indirect short-period superlattice
Indium arsenide
Linewidth enhancement factor
Quantum dot laser

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10.1016/j.mejo.2005.02.001

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title = "A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps",

abstract = "We propose the idea of making quantum dot (QD) lasers by embedding direct-bandgap QDs in a short-period superlattice whose bandgap is indirect. In comparison with similar QD lasers with barriers of direct band gap, this technique not only reduces the temperature dependence of threshold current, but also leads to extremely small linewidth enhancement factor, making low-temperature sensitivity, low chirp, and narrow linewidth semiconductor lasers feasible.",

keywords = "Indirect short-period superlattice, Indium arsenide, Linewidth enhancement factor, Quantum dot laser",

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year = "2005",

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doi = "10.1016/j.mejo.2005.02.001",

language = "English",

volume = "36",

pages = "183--185",

journal = "Microelectronics",

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T1 - A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps

AU - Sun, G.

AU - Soref, Richard A.

AU - Khurgin, Jacob B.

PY - 2005/3

Y1 - 2005/3

N2 - We propose the idea of making quantum dot (QD) lasers by embedding direct-bandgap QDs in a short-period superlattice whose bandgap is indirect. In comparison with similar QD lasers with barriers of direct band gap, this technique not only reduces the temperature dependence of threshold current, but also leads to extremely small linewidth enhancement factor, making low-temperature sensitivity, low chirp, and narrow linewidth semiconductor lasers feasible.

AB - We propose the idea of making quantum dot (QD) lasers by embedding direct-bandgap QDs in a short-period superlattice whose bandgap is indirect. In comparison with similar QD lasers with barriers of direct band gap, this technique not only reduces the temperature dependence of threshold current, but also leads to extremely small linewidth enhancement factor, making low-temperature sensitivity, low chirp, and narrow linewidth semiconductor lasers feasible.

KW - Indirect short-period superlattice

KW - Indium arsenide

KW - Linewidth enhancement factor

KW - Quantum dot laser

UR - https://www.scopus.com/pages/publications/33644537932

UR - https://www.scopus.com/pages/publications/33644537932#tab=citedBy

U2 - 10.1016/j.mejo.2005.02.001

DO - 10.1016/j.mejo.2005.02.001

M3 - Conference article

AN - SCOPUS:33644537932

SN - 0026-2692

VL - 36

SP - 183

EP - 185

JO - Microelectronics

JF - Microelectronics

IS - 3-6

ER -

A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps

Abstract

ASJC Scopus Subject Areas

Keywords

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