A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps

  • G. Sun
  • , Richard A. Soref
  • , Jacob B. Khurgin

Research output: Contribution to journalConference articlepeer-review

Original languageEnglish
Pages (from-to)183-185
Number of pages3
JournalMicroelectronics Journal
Volume36
Issue number3-6
DOIs
StatePublished - Mar 2005

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Keywords

  • Indirect short-period superlattice
  • Indium arsenide
  • Linewidth enhancement factor
  • Quantum dot laser

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