A Three Terminal InP/InGaAsP Optoelectronic Thyristor

Walter R. Buchwald; Jian H. Zhao; Longde Zhu; Stephen Schauer; Kenneth A. Jones

doi:10.1109/16.278522

A Three Terminal InP/InGaAsP Optoelectronic Thyristor

Walter R. Buchwald
, Jian H. Zhao
, Longde Zhu
, Stephen Schauer
, Kenneth A. Jones

Engineering

Rutgers - The State University of New Jersey, New Brunswick
U. S. Army Electronics Technology and Devices Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

A three terminal light emitting opto-thyristor based on InP/InGaAsP heterostructures grown by liquid phase epitaxy (LPE) has been demonstrated. The opto-thyristor essentially combines the conventional PNPN thyristor and the NpN double heterostructure laser structure into a single PNpN device. Current-Voltage characteristics confirm the thyristor type switching action with a maximum gate controllable breakover voltage of 8 V. Substantially increased light output at wavelengths of 1.3 and 0.93 μ m is observed upon switching. The optical output as a function of device voltage is also reported.

Original language	English
Pages (from-to)	620-622
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	41
Issue number	4
DOIs	https://doi.org/10.1109/16.278522
State	Published - Apr 1994

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.278522

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@article{1cd1090902814906a34cb7658d4fab19,

title = "A Three Terminal InP/InGaAsP Optoelectronic Thyristor",

abstract = "A three terminal light emitting opto-thyristor based on InP/InGaAsP heterostructures grown by liquid phase epitaxy (LPE) has been demonstrated. The opto-thyristor essentially combines the conventional PNPN thyristor and the NpN double heterostructure laser structure into a single PNpN device. Current-Voltage characteristics confirm the thyristor type switching action with a maximum gate controllable breakover voltage of 8 V. Substantially increased light output at wavelengths of 1.3 and 0.93 μ m is observed upon switching. The optical output as a function of device voltage is also reported.",

author = "Buchwald, \{Walter R.\} and Zhao, \{Jian H.\} and Longde Zhu and Stephen Schauer and Jones, \{Kenneth A.\}",

year = "1994",

month = apr,

doi = "10.1109/16.278522",

language = "English",

volume = "41",

pages = "620--622",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - A Three Terminal InP/InGaAsP Optoelectronic Thyristor

AU - Buchwald, Walter R.

AU - Zhao, Jian H.

AU - Zhu, Longde

AU - Schauer, Stephen

AU - Jones, Kenneth A.

PY - 1994/4

Y1 - 1994/4

N2 - A three terminal light emitting opto-thyristor based on InP/InGaAsP heterostructures grown by liquid phase epitaxy (LPE) has been demonstrated. The opto-thyristor essentially combines the conventional PNPN thyristor and the NpN double heterostructure laser structure into a single PNpN device. Current-Voltage characteristics confirm the thyristor type switching action with a maximum gate controllable breakover voltage of 8 V. Substantially increased light output at wavelengths of 1.3 and 0.93 μ m is observed upon switching. The optical output as a function of device voltage is also reported.

AB - A three terminal light emitting opto-thyristor based on InP/InGaAsP heterostructures grown by liquid phase epitaxy (LPE) has been demonstrated. The opto-thyristor essentially combines the conventional PNPN thyristor and the NpN double heterostructure laser structure into a single PNpN device. Current-Voltage characteristics confirm the thyristor type switching action with a maximum gate controllable breakover voltage of 8 V. Substantially increased light output at wavelengths of 1.3 and 0.93 μ m is observed upon switching. The optical output as a function of device voltage is also reported.

UR - https://www.scopus.com/pages/publications/0028416710

UR - https://www.scopus.com/pages/publications/0028416710#tab=citedBy

U2 - 10.1109/16.278522

DO - 10.1109/16.278522

M3 - Article

AN - SCOPUS:0028416710

SN - 0018-9383

VL - 41

SP - 620

EP - 622

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

A Three Terminal InP/InGaAsP Optoelectronic Thyristor

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