| Original language | English |
|---|---|
| Pages (from-to) | 2810-2812 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 62 |
| Issue number | 22 |
| DOIs | |
| State | Published - 1993 |
ASJC Scopus Subject Areas
- Physics and Astronomy (miscellaneous)
Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition
- J. H. Zhao
- , Z. Lu
- , W. Buchwald
- , D. Coblentz
- , S. McAfee
Research output: Contribution to journal › Article › peer-review