Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition

J. H. Zhao; Z. Lu; W. Buchwald; D. Coblentz; S. McAfee

doi:10.1063/1.109217

Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition

J. H. Zhao
, Z. Lu
, W. Buchwald
, D. Coblentz
, S. McAfee

Engineering

Rutgers - The State University of New Jersey, New Brunswick
Nokia

Research output: Contribution to journal › Article › peer-review

Abstract

A set of sulfur-doped low pressure metalorganic vapor phase epitaxy InP/InGaAsP single quantum wells have been studied by admittance spectroscopy and a variety of other techniques. Admittance spectroscopy allows the studies of carrier emission from both the sulfur shallow impurity state and a quantum well which is seen to behave like a giant trap. The electron emission rates will be reported and the sulfur shallow impurity level is found to be 10 meV, in agreement with a simple theoretical calculation.

Original language	English
Pages (from-to)	2810-2812
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	22
DOIs	https://doi.org/10.1063/1.109217
State	Published - 1993

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition",

abstract = "A set of sulfur-doped low pressure metalorganic vapor phase epitaxy InP/InGaAsP single quantum wells have been studied by admittance spectroscopy and a variety of other techniques. Admittance spectroscopy allows the studies of carrier emission from both the sulfur shallow impurity state and a quantum well which is seen to behave like a giant trap. The electron emission rates will be reported and the sulfur shallow impurity level is found to be 10 meV, in agreement with a simple theoretical calculation.",

author = "Zhao, \{J. H.\} and Z. Lu and W. Buchwald and D. Coblentz and S. McAfee",

year = "1993",

doi = "10.1063/1.109217",

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journal = "Applied Physics Letters",

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T1 - Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition

AU - Zhao, J. H.

AU - Lu, Z.

AU - Buchwald, W.

AU - Coblentz, D.

AU - McAfee, S.

PY - 1993

Y1 - 1993

N2 - A set of sulfur-doped low pressure metalorganic vapor phase epitaxy InP/InGaAsP single quantum wells have been studied by admittance spectroscopy and a variety of other techniques. Admittance spectroscopy allows the studies of carrier emission from both the sulfur shallow impurity state and a quantum well which is seen to behave like a giant trap. The electron emission rates will be reported and the sulfur shallow impurity level is found to be 10 meV, in agreement with a simple theoretical calculation.

AB - A set of sulfur-doped low pressure metalorganic vapor phase epitaxy InP/InGaAsP single quantum wells have been studied by admittance spectroscopy and a variety of other techniques. Admittance spectroscopy allows the studies of carrier emission from both the sulfur shallow impurity state and a quantum well which is seen to behave like a giant trap. The electron emission rates will be reported and the sulfur shallow impurity level is found to be 10 meV, in agreement with a simple theoretical calculation.

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U2 - 10.1063/1.109217

DO - 10.1063/1.109217

M3 - Article

AN - SCOPUS:0041104284

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition

Abstract

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