Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition

J. H. Zhao; Z. Lu; W. Buchwald; D. Coblentz; S. McAfee

doi:10.1063/1.109217

Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition

J. H. Zhao
, Z. Lu
, W. Buchwald
, D. Coblentz
, S. McAfee

Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2810-2812
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	22
DOIs	https://doi.org/10.1063/1.109217
State	Published - 1993

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition",

author = "Zhao, \{J. H.\} and Z. Lu and W. Buchwald and D. Coblentz and S. McAfee",

year = "1993",

doi = "10.1063/1.109217",

language = "English",

volume = "62",

pages = "2810--2812",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition

AU - Zhao, J. H.

AU - Lu, Z.

AU - Buchwald, W.

AU - Coblentz, D.

AU - McAfee, S.

PY - 1993

Y1 - 1993

UR - https://www.scopus.com/pages/publications/0041104284

UR - https://www.scopus.com/pages/publications/0041104284#tab=citedBy

U2 - 10.1063/1.109217

DO - 10.1063/1.109217

M3 - Article

AN - SCOPUS:0041104284

SN - 0003-6951

VL - 62

SP - 2810

EP - 2812

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition

ASJC Scopus Subject Areas

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