All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

Joe Margetis; Yiyin Zhou; Wei Dou; Perry C. Grant; Bader Alharthi; Wei Du; Alicia Wadsworth; Qianying Guo; Huong Tran; Solomon Ojo; Grey Abernathy; Aboozar Mosleh; Seyed A. Ghetmiri; Gregory B. Thompson; Jifeng Liu; Greg Sun; Richard Soref; John Tolle; Baohua Li; Mansour Mortazavi; Shui Qing Yu

doi:10.1063/1.5052563

All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

Joe Margetis
, Yiyin Zhou
, Wei Dou
, Perry C. Grant
, Bader Alharthi
, Wei Du
, Alicia Wadsworth
, Qianying Guo
, Huong Tran
, Solomon Ojo
, Grey Abernathy
, Aboozar Mosleh
, Seyed A. Ghetmiri
, Gregory B. Thompson
, Jifeng Liu
, Greg Sun
, Richard Soref
, John Tolle
, Baohua Li
, Mansour Mortazavi

Shui Qing Yu

Engineering

ASM
University of Arkansas System
Arktonics, LLC
Wilkes University
University of Alabama
University of Arkansas at Pine Bluff
Dartmouth College
University of Massachusetts Boston

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, all group-IV band-to-band lasers based on SiGeSn/GeSn/SiGeSn multi-quantum-well structures were demonstrated. Lasing performance was investigated via two 4-well samples. The thinner GeSn well sample exhibits a maximum lasing temperature of 20 K and a threshold of 55 kW/cm² at 10 K, while the thicker well sample features a higher maximum operating temperature of 90 K and lower lasing thresholds of 25 and 62 kW/cm² at 10 and 77 K, respectively. The distinct results were tentatively interpreted mainly by the difference of gain volume. This result provides guidance for the future GeSn quantum well laser optimization for higher performance.

Original language	English
Article number	221104
Journal	Applied Physics Letters
Volume	113
Issue number	22
DOIs	https://doi.org/10.1063/1.5052563
State	Published - Nov 26 2018

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5052563

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Margetis, J., Zhou, Y., Dou, W., Grant, P. C., Alharthi, B., Du, W., Wadsworth, A., Guo, Q., Tran, H., Ojo, S., Abernathy, G., Mosleh, A., Ghetmiri, S. A., Thompson, G. B., Liu, J., Sun, G., Soref, R., Tolle, J., Li, B., ... Yu, S. Q. (2018). All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K. Applied Physics Letters, 113(22), Article 221104. https://doi.org/10.1063/1.5052563

Margetis, J, Zhou, Y, Dou, W, Grant, PC, Alharthi, B, Du, W, Wadsworth, A, Guo, Q, Tran, H, Ojo, S, Abernathy, G, Mosleh, A, Ghetmiri, SA, Thompson, GB, Liu, J, Sun, G, Soref, R, Tolle, J, Li, B, Mortazavi, M & Yu, SQ 2018, 'All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K', Applied Physics Letters, vol. 113, no. 22, 221104. https://doi.org/10.1063/1.5052563

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title = "All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K",

abstract = "In this work, all group-IV band-to-band lasers based on SiGeSn/GeSn/SiGeSn multi-quantum-well structures were demonstrated. Lasing performance was investigated via two 4-well samples. The thinner GeSn well sample exhibits a maximum lasing temperature of 20 K and a threshold of 55 kW/cm2 at 10 K, while the thicker well sample features a higher maximum operating temperature of 90 K and lower lasing thresholds of 25 and 62 kW/cm2 at 10 and 77 K, respectively. The distinct results were tentatively interpreted mainly by the difference of gain volume. This result provides guidance for the future GeSn quantum well laser optimization for higher performance.",

author = "Joe Margetis and Yiyin Zhou and Wei Dou and Grant, \{Perry C.\} and Bader Alharthi and Wei Du and Alicia Wadsworth and Qianying Guo and Huong Tran and Solomon Ojo and Grey Abernathy and Aboozar Mosleh and Ghetmiri, \{Seyed A.\} and Thompson, \{Gregory B.\} and Jifeng Liu and Greg Sun and Richard Soref and John Tolle and Baohua Li and Mansour Mortazavi and Yu, \{Shui Qing\}",

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doi = "10.1063/1.5052563",

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AU - Margetis, Joe

AU - Zhou, Yiyin

AU - Dou, Wei

AU - Grant, Perry C.

AU - Alharthi, Bader

AU - Du, Wei

AU - Wadsworth, Alicia

AU - Guo, Qianying

AU - Tran, Huong

AU - Ojo, Solomon

AU - Abernathy, Grey

AU - Mosleh, Aboozar

AU - Ghetmiri, Seyed A.

AU - Thompson, Gregory B.

AU - Liu, Jifeng

AU - Sun, Greg

AU - Soref, Richard

AU - Tolle, John

AU - Li, Baohua

AU - Mortazavi, Mansour

AU - Yu, Shui Qing

PY - 2018/11/26

Y1 - 2018/11/26

N2 - In this work, all group-IV band-to-band lasers based on SiGeSn/GeSn/SiGeSn multi-quantum-well structures were demonstrated. Lasing performance was investigated via two 4-well samples. The thinner GeSn well sample exhibits a maximum lasing temperature of 20 K and a threshold of 55 kW/cm2 at 10 K, while the thicker well sample features a higher maximum operating temperature of 90 K and lower lasing thresholds of 25 and 62 kW/cm2 at 10 and 77 K, respectively. The distinct results were tentatively interpreted mainly by the difference of gain volume. This result provides guidance for the future GeSn quantum well laser optimization for higher performance.

AB - In this work, all group-IV band-to-band lasers based on SiGeSn/GeSn/SiGeSn multi-quantum-well structures were demonstrated. Lasing performance was investigated via two 4-well samples. The thinner GeSn well sample exhibits a maximum lasing temperature of 20 K and a threshold of 55 kW/cm2 at 10 K, while the thicker well sample features a higher maximum operating temperature of 90 K and lower lasing thresholds of 25 and 62 kW/cm2 at 10 and 77 K, respectively. The distinct results were tentatively interpreted mainly by the difference of gain volume. This result provides guidance for the future GeSn quantum well laser optimization for higher performance.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 221104

ER -

All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

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