An InP-Based Optothyristor for Pulsed Power-Switching Applications

Jian H. Zhao; Robert Lis; Juan Illan; Sigrid McAfee; Debbie Coblentz; Terry Burke; Walter Buchwald; Maurice Weiner; Kenneth A. Jones

doi:10.1109/55.215137

An InP-Based Optothyristor for Pulsed Power-Switching Applications

Jian H. Zhao
, Robert Lis
, Juan Illan
, Sigrid McAfee
, Debbie Coblentz
, Terry Burke
, Walter Buchwald
, Maurice Weiner
, Kenneth A. Jones

Engineering

Rutgers - The State University of New Jersey, New Brunswick
Nokia
ETD Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

A high-power InP-based optothyristor has been fabricated and tested for pulsed power switching. To increase the power handling capability, the device has a 250-μm-thick Fe-doped semi-insulating (SI) InP sandwiched between two p-n junctions grown by MOCVD. The device turn-on is controlled by optical illumination on the Sl-InP, which creates a high concentration of electron and hole pairs. The switched current and the di/dt rating have been studied as a function of the switch blocking voltage. It is shown that the optothyristor is capable of switching a current almost four times the current switched by a bulk Sl-InP photoconductive switch under the same voltage bias.

Original language	English
Pages (from-to)	140-142
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	14
Issue number	3
DOIs	https://doi.org/10.1109/55.215137
State	Published - Mar 1993

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.215137

Cite this

@article{c9d1685987b54a4db94de6607333920a,

title = "An InP-Based Optothyristor for Pulsed Power-Switching Applications",

abstract = "A high-power InP-based optothyristor has been fabricated and tested for pulsed power switching. To increase the power handling capability, the device has a 250-μm-thick Fe-doped semi-insulating (SI) InP sandwiched between two p-n junctions grown by MOCVD. The device turn-on is controlled by optical illumination on the Sl-InP, which creates a high concentration of electron and hole pairs. The switched current and the di/dt rating have been studied as a function of the switch blocking voltage. It is shown that the optothyristor is capable of switching a current almost four times the current switched by a bulk Sl-InP photoconductive switch under the same voltage bias.",

author = "Zhao, \{Jian H.\} and Robert Lis and Juan Illan and Sigrid McAfee and Debbie Coblentz and Terry Burke and Walter Buchwald and Maurice Weiner and Jones, \{Kenneth A.\}",

year = "1993",

month = mar,

doi = "10.1109/55.215137",

language = "English",

volume = "14",

pages = "140--142",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - An InP-Based Optothyristor for Pulsed Power-Switching Applications

AU - Zhao, Jian H.

AU - Lis, Robert

AU - Illan, Juan

AU - McAfee, Sigrid

AU - Coblentz, Debbie

AU - Burke, Terry

AU - Buchwald, Walter

AU - Weiner, Maurice

AU - Jones, Kenneth A.

PY - 1993/3

Y1 - 1993/3

N2 - A high-power InP-based optothyristor has been fabricated and tested for pulsed power switching. To increase the power handling capability, the device has a 250-μm-thick Fe-doped semi-insulating (SI) InP sandwiched between two p-n junctions grown by MOCVD. The device turn-on is controlled by optical illumination on the Sl-InP, which creates a high concentration of electron and hole pairs. The switched current and the di/dt rating have been studied as a function of the switch blocking voltage. It is shown that the optothyristor is capable of switching a current almost four times the current switched by a bulk Sl-InP photoconductive switch under the same voltage bias.

AB - A high-power InP-based optothyristor has been fabricated and tested for pulsed power switching. To increase the power handling capability, the device has a 250-μm-thick Fe-doped semi-insulating (SI) InP sandwiched between two p-n junctions grown by MOCVD. The device turn-on is controlled by optical illumination on the Sl-InP, which creates a high concentration of electron and hole pairs. The switched current and the di/dt rating have been studied as a function of the switch blocking voltage. It is shown that the optothyristor is capable of switching a current almost four times the current switched by a bulk Sl-InP photoconductive switch under the same voltage bias.

UR - https://www.scopus.com/pages/publications/0027557067

UR - https://www.scopus.com/pages/publications/0027557067#tab=citedBy

U2 - 10.1109/55.215137

DO - 10.1109/55.215137

M3 - Article

AN - SCOPUS:0027557067

SN - 0741-3106

VL - 14

SP - 140

EP - 142

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

An InP-Based Optothyristor for Pulsed Power-Switching Applications

Abstract

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this