An LPE Grown InP Based Optothyristor for Power Switching Applications

Robert J. Lis; Jian H. Zhao; Long D. Zhu; J. Illan; Sigrid McAfee; Walter R. Buchwald

doi:10.1109/16.285035

An LPE Grown InP Based Optothyristor for Power Switching Applications

Robert J. Lis
, Jian H. Zhao
, Long D. Zhu
, J. Illan
, Sigrid McAfee
, Walter R. Buchwald

Engineering

Rutgers - The State University of New Jersey, New Brunswick
EPS Directorate

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents the results of a new InP based optothyristor for pulsed high power switching applications and compares them with a traditional InP photoconductive switch operating under similar conditions. The optothyristor utilized a semi-insulating InP wafer inserted between the two PN junctions in a conventional thyristor structure. We also determined the dynamic I-V characteristics and the di/dt turn-on parameter for this novel optothyristor. Using a 1.06 µm YAG laser to trigger the optothyristor, we have achieved a 1200 V (4.8 x 104V/cm) hold-off voltage with a maximum current of 61 A. The current rise time for device turn-on was measured to be consistently under 12 ns, and a maximum di/dt of 1.4 x 1010A/s was obtained.

Original language	English
Pages (from-to)	809-813
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	41
Issue number	5
DOIs	https://doi.org/10.1109/16.285035
State	Published - May 1994

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/16.285035

Cite this

@article{ee9f53cfa3b04d16b79ddc7f353560f1,

title = "An LPE Grown InP Based Optothyristor for Power Switching Applications",

abstract = "This paper presents the results of a new InP based optothyristor for pulsed high power switching applications and compares them with a traditional InP photoconductive switch operating under similar conditions. The optothyristor utilized a semi-insulating InP wafer inserted between the two PN junctions in a conventional thyristor structure. We also determined the dynamic I-V characteristics and the di/dt turn-on parameter for this novel optothyristor. Using a 1.06 µm YAG laser to trigger the optothyristor, we have achieved a 1200 V (4.8 x 104V/cm) hold-off voltage with a maximum current of 61 A. The current rise time for device turn-on was measured to be consistently under 12 ns, and a maximum di/dt of 1.4 x 1010A/s was obtained.",

author = "Lis, \{Robert J.\} and Zhao, \{Jian H.\} and Zhu, \{Long D.\} and J. Illan and Sigrid McAfee and Buchwald, \{Walter R.\}",

year = "1994",

month = may,

doi = "10.1109/16.285035",

language = "English",

volume = "41",

pages = "809--813",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - An LPE Grown InP Based Optothyristor for Power Switching Applications

AU - Lis, Robert J.

AU - Zhao, Jian H.

AU - Zhu, Long D.

AU - Illan, J.

AU - McAfee, Sigrid

AU - Buchwald, Walter R.

PY - 1994/5

Y1 - 1994/5

N2 - This paper presents the results of a new InP based optothyristor for pulsed high power switching applications and compares them with a traditional InP photoconductive switch operating under similar conditions. The optothyristor utilized a semi-insulating InP wafer inserted between the two PN junctions in a conventional thyristor structure. We also determined the dynamic I-V characteristics and the di/dt turn-on parameter for this novel optothyristor. Using a 1.06 µm YAG laser to trigger the optothyristor, we have achieved a 1200 V (4.8 x 104V/cm) hold-off voltage with a maximum current of 61 A. The current rise time for device turn-on was measured to be consistently under 12 ns, and a maximum di/dt of 1.4 x 1010A/s was obtained.

AB - This paper presents the results of a new InP based optothyristor for pulsed high power switching applications and compares them with a traditional InP photoconductive switch operating under similar conditions. The optothyristor utilized a semi-insulating InP wafer inserted between the two PN junctions in a conventional thyristor structure. We also determined the dynamic I-V characteristics and the di/dt turn-on parameter for this novel optothyristor. Using a 1.06 µm YAG laser to trigger the optothyristor, we have achieved a 1200 V (4.8 x 104V/cm) hold-off voltage with a maximum current of 61 A. The current rise time for device turn-on was measured to be consistently under 12 ns, and a maximum di/dt of 1.4 x 1010A/s was obtained.

UR - https://www.scopus.com/pages/publications/0028428247

UR - https://www.scopus.com/pages/publications/0028428247#tab=citedBy

U2 - 10.1109/16.285035

DO - 10.1109/16.285035

M3 - Article

AN - SCOPUS:0028428247

SN - 0018-9383

VL - 41

SP - 809

EP - 813

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

An LPE Grown InP Based Optothyristor for Power Switching Applications

Abstract

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this