An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K

Sattar Al-Kabi; Seyed Amir Ghetmiri; Joe Margetis; Thach Pham; Yiyin Zhou; Wei Dou; Bria Collier; Randy Quinde; Wei Du; Aboozar Mosleh; Jifeng Liu; Greg Sun; Richard A. Soref; John Tolle; Baohua Li; Mansour Mortazavi; Hameed A. Naseem; Shui Qing Yu

doi:10.1063/1.4966141

An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K

Sattar Al-Kabi
, Seyed Amir Ghetmiri
, Joe Margetis
, Thach Pham
, Yiyin Zhou
, Wei Dou
, Bria Collier
, Randy Quinde
, Wei Du
, Aboozar Mosleh
, Jifeng Liu
, Greg Sun
, Richard A. Soref
, John Tolle
, Baohua Li
, Mansour Mortazavi
, Hameed A. Naseem
, Shui Qing Yu

Engineering

University of Arkansas System
ASM
University of Arkansas at Pine Bluff
University of Minnesota Twin Cities
Dartmouth College
University of Massachusetts Boston
Arktonics, LLC

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown on Si substrates. The whole device structures were grown by an industry standard chemical vapor deposition reactor using the low cost commercially available precursors SnCl₄ and GeH₄ in a single run epitaxy process. Temperature-dependent characteristics of laser-output versus pumping-laser-input showed lasing operation up to 110 K. The 10 K lasing threshold and wavelength were measured as 68 kW/cm² and 2476 nm, respectively. Lasing characteristic temperature (T₀) was extracted as 65 K.

Original language	English
Article number	171105
Journal	Applied Physics Letters
Volume	109
Issue number	17
DOIs	https://doi.org/10.1063/1.4966141
State	Published - Oct 24 2016

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4966141

Cite this

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title = "An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K",

abstract = "This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown on Si substrates. The whole device structures were grown by an industry standard chemical vapor deposition reactor using the low cost commercially available precursors SnCl4 and GeH4 in a single run epitaxy process. Temperature-dependent characteristics of laser-output versus pumping-laser-input showed lasing operation up to 110 K. The 10 K lasing threshold and wavelength were measured as 68 kW/cm2 and 2476 nm, respectively. Lasing characteristic temperature (T0) was extracted as 65 K.",

author = "Sattar Al-Kabi and Ghetmiri, \{Seyed Amir\} and Joe Margetis and Thach Pham and Yiyin Zhou and Wei Dou and Bria Collier and Randy Quinde and Wei Du and Aboozar Mosleh and Jifeng Liu and Greg Sun and Soref, \{Richard A.\} and John Tolle and Baohua Li and Mansour Mortazavi and Naseem, \{Hameed A.\} and Yu, \{Shui Qing\}",

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month = oct,

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doi = "10.1063/1.4966141",

language = "English",

volume = "109",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K

AU - Al-Kabi, Sattar

AU - Ghetmiri, Seyed Amir

AU - Margetis, Joe

AU - Pham, Thach

AU - Zhou, Yiyin

AU - Dou, Wei

AU - Collier, Bria

AU - Quinde, Randy

AU - Du, Wei

AU - Mosleh, Aboozar

AU - Liu, Jifeng

AU - Sun, Greg

AU - Soref, Richard A.

AU - Tolle, John

AU - Li, Baohua

AU - Mortazavi, Mansour

AU - Naseem, Hameed A.

AU - Yu, Shui Qing

PY - 2016/10/24

Y1 - 2016/10/24

N2 - This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown on Si substrates. The whole device structures were grown by an industry standard chemical vapor deposition reactor using the low cost commercially available precursors SnCl4 and GeH4 in a single run epitaxy process. Temperature-dependent characteristics of laser-output versus pumping-laser-input showed lasing operation up to 110 K. The 10 K lasing threshold and wavelength were measured as 68 kW/cm2 and 2476 nm, respectively. Lasing characteristic temperature (T0) was extracted as 65 K.

AB - This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown on Si substrates. The whole device structures were grown by an industry standard chemical vapor deposition reactor using the low cost commercially available precursors SnCl4 and GeH4 in a single run epitaxy process. Temperature-dependent characteristics of laser-output versus pumping-laser-input showed lasing operation up to 110 K. The 10 K lasing threshold and wavelength were measured as 68 kW/cm2 and 2476 nm, respectively. Lasing characteristic temperature (T0) was extracted as 65 K.

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DO - 10.1063/1.4966141

M3 - Article

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SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171105

ER -

An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K

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