Analytical Voltage Dependence of An Unsaturated Mesfet'S Gate Capacitance

P. A. Folkes; M. Taysing-Lara; W. Buchwald; P. Newman; Louis Poli

doi:10.1109/55.79560

Analytical Voltage Dependence of An Unsaturated Mesfet'S Gate Capacitance

P. A. Folkes
, M. Taysing-Lara
, W. Buchwald
, P. Newman
, Louis Poli

Engineering

U. S. Army Electronics Technology and Devices Laboratory

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	215-217
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	5
DOIs	https://doi.org/10.1109/55.79560
State	Published - May 1991

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Analytical Voltage Dependence of An Unsaturated Mesfet'S Gate Capacitance",

author = "Folkes, \{P. A.\} and M. Taysing-Lara and W. Buchwald and P. Newman and Louis Poli",

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AU - Buchwald, W.

AU - Newman, P.

AU - Poli, Louis

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Analytical Voltage Dependence of An Unsaturated Mesfet'S Gate Capacitance

ASJC Scopus Subject Areas

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