Band Structure of Strained Ge1-xSnx Alloy: A Full-Zone 30-Band k·p Model

Zhigang Song; Weijun Fan; Chuan Seng Tan; Qijie Wang; Donguk Nam; Dao Hua Zhang; Greg Sun

doi:10.1109/JQE.2019.2947710

Band Structure of Strained Ge_1-xSn_x Alloy: A Full-Zone 30-Band k·p Model

Zhigang Song
, Weijun Fan
, Chuan Seng Tan
, Qijie Wang
, Donguk Nam
, Dao Hua Zhang
, Greg Sun

Engineering

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

Abstract

We extend the previous 30-band k·p model effectively employed for relaxed Ge_1-xSn_x alloy to the case of strained Ge_1-xSn_x alloy. The strain-relevant parameters for the 30-band k·p model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the dependence of band-gap at L -valley and Γ-valley with different Sn composition under uniaxial and biaxial strain along [100], [110] and [111] directions. The good agreement between our theoretical predictions and experimental data validates the effectiveness of our model. Our 30-band k·p model and relevant input parameters successfully applied to relaxed and strained Ge_1-xSn_x alloy offers a powerful tool for the optimization of sophisticated devices made from such alloy.

Original language	English
Article number	8871170
Journal	IEEE Journal of Quantum Electronics
Volume	56
Issue number	1
DOIs	https://doi.org/10.1109/JQE.2019.2947710
State	Published - Feb 2020

ASJC Scopus Subject Areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

30-band k·p
biaxial strain
Ge
GeSn alloy
uniaxial strain

Access to Document

10.1109/JQE.2019.2947710

Cite this

@article{585c612498f44093adfc5f182d63d0fd,

title = "Band Structure of Strained Ge1-xSnx Alloy: A Full-Zone 30-Band k·p Model",

abstract = "We extend the previous 30-band k·p model effectively employed for relaxed Ge1-xSnx alloy to the case of strained Ge1-xSnx alloy. The strain-relevant parameters for the 30-band k·p model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the dependence of band-gap at L -valley and Γ-valley with different Sn composition under uniaxial and biaxial strain along [100], [110] and [111] directions. The good agreement between our theoretical predictions and experimental data validates the effectiveness of our model. Our 30-band k·p model and relevant input parameters successfully applied to relaxed and strained Ge1-xSnx alloy offers a powerful tool for the optimization of sophisticated devices made from such alloy.",

keywords = "30-band k·p, biaxial strain, Ge, GeSn alloy, uniaxial strain",

author = "Zhigang Song and Weijun Fan and Tan, \{Chuan Seng\} and Qijie Wang and Donguk Nam and Zhang, \{Dao Hua\} and Greg Sun",

note = "Publisher Copyright: {\textcopyright} 1965-2012 IEEE.",

year = "2020",

month = feb,

doi = "10.1109/JQE.2019.2947710",

language = "English",

volume = "56",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Band Structure of Strained Ge1-xSnx Alloy

T2 - A Full-Zone 30-Band k·p Model

AU - Song, Zhigang

AU - Fan, Weijun

AU - Tan, Chuan Seng

AU - Wang, Qijie

AU - Nam, Donguk

AU - Zhang, Dao Hua

AU - Sun, Greg

PY - 2020/2

Y1 - 2020/2

N2 - We extend the previous 30-band k·p model effectively employed for relaxed Ge1-xSnx alloy to the case of strained Ge1-xSnx alloy. The strain-relevant parameters for the 30-band k·p model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the dependence of band-gap at L -valley and Γ-valley with different Sn composition under uniaxial and biaxial strain along [100], [110] and [111] directions. The good agreement between our theoretical predictions and experimental data validates the effectiveness of our model. Our 30-band k·p model and relevant input parameters successfully applied to relaxed and strained Ge1-xSnx alloy offers a powerful tool for the optimization of sophisticated devices made from such alloy.

AB - We extend the previous 30-band k·p model effectively employed for relaxed Ge1-xSnx alloy to the case of strained Ge1-xSnx alloy. The strain-relevant parameters for the 30-band k·p model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the dependence of band-gap at L -valley and Γ-valley with different Sn composition under uniaxial and biaxial strain along [100], [110] and [111] directions. The good agreement between our theoretical predictions and experimental data validates the effectiveness of our model. Our 30-band k·p model and relevant input parameters successfully applied to relaxed and strained Ge1-xSnx alloy offers a powerful tool for the optimization of sophisticated devices made from such alloy.

KW - 30-band k·p

KW - biaxial strain

KW - Ge

KW - GeSn alloy

KW - uniaxial strain

UR - https://www.scopus.com/pages/publications/85077209824

UR - https://www.scopus.com/pages/publications/85077209824#tab=citedBy

U2 - 10.1109/JQE.2019.2947710

DO - 10.1109/JQE.2019.2947710

M3 - Article

AN - SCOPUS:85077209824

SN - 0018-9197

VL - 56

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 1

M1 - 8871170

ER -