Carrier dynamics of terahertz emission based on strained SiGe/Si single quantum well

K. M. Hung; J. Y. Kuo; C. C. Hong; H. H. Cheng; G. Sun; R. A. Soref

doi:10.1063/1.3432075

Carrier dynamics of terahertz emission based on strained SiGe/Si single quantum well

K. M. Hung
, J. Y. Kuo
, C. C. Hong
, H. H. Cheng
, G. Sun
, R. A. Soref

Engineering

National Kaohsiung University of Science and Technology
National Taiwan University
Air Force Research Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

We report analysis of the carrier distribution during terahertz emission process with carrier-phonon interaction based on p-doped strained SiGe/Si single quantum-well. The results of this analysis show that a considerable number of carriers can penetrate the phonon wall to become "hot" carriers on an approximately picosecond timescale. These hot carriers relax after the removal of the applied voltage, generating a "second" emission in the measurement. This investigation provides an understanding of the carrier dynamics of terahertz emission and has an implication for the design of semiconductor terahertz emitters.

Original language	English
Article number	213502
Journal	Applied Physics Letters
Volume	96
Issue number	21
DOIs	https://doi.org/10.1063/1.3432075
State	Published - May 24 2010

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3432075

Cite this

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abstract = "We report analysis of the carrier distribution during terahertz emission process with carrier-phonon interaction based on p-doped strained SiGe/Si single quantum-well. The results of this analysis show that a considerable number of carriers can penetrate the phonon wall to become {"}hot{"} carriers on an approximately picosecond timescale. These hot carriers relax after the removal of the applied voltage, generating a {"}second{"} emission in the measurement. This investigation provides an understanding of the carrier dynamics of terahertz emission and has an implication for the design of semiconductor terahertz emitters.",

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AU - Hung, K. M.

AU - Kuo, J. Y.

AU - Hong, C. C.

AU - Cheng, H. H.

AU - Sun, G.

AU - Soref, R. A.

PY - 2010/5/24

Y1 - 2010/5/24

N2 - We report analysis of the carrier distribution during terahertz emission process with carrier-phonon interaction based on p-doped strained SiGe/Si single quantum-well. The results of this analysis show that a considerable number of carriers can penetrate the phonon wall to become "hot" carriers on an approximately picosecond timescale. These hot carriers relax after the removal of the applied voltage, generating a "second" emission in the measurement. This investigation provides an understanding of the carrier dynamics of terahertz emission and has an implication for the design of semiconductor terahertz emitters.

AB - We report analysis of the carrier distribution during terahertz emission process with carrier-phonon interaction based on p-doped strained SiGe/Si single quantum-well. The results of this analysis show that a considerable number of carriers can penetrate the phonon wall to become "hot" carriers on an approximately picosecond timescale. These hot carriers relax after the removal of the applied voltage, generating a "second" emission in the measurement. This investigation provides an understanding of the carrier dynamics of terahertz emission and has an implication for the design of semiconductor terahertz emitters.

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JO - Applied Physics Letters

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Carrier dynamics of terahertz emission based on strained SiGe/Si single quantum well

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