Abstract
A new tunable source of the far-infrared radiation based on intersubband electronic Raman scattering in semiconductor quantum wells is proposed. The gain and threshold of the proposed Raman oscillator are estimated and compared with the intersubband laser.
| Original language | English |
|---|---|
| Pages (from-to) | 7398-7400 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 78 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1995 |
ASJC Scopus Subject Areas
- General Physics and Astronomy
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