Design and simulation of a mid-infrared quantum cascade laser based on Ge-Si superlattices

Yanwu Lu; Gregory Sun

doi:10.4028/3-908451-30-2.677

Design and simulation of a mid-infrared quantum cascade laser based on Ge-Si superlattices

Yanwu Lu
, Gregory Sun

Engineering

Beijing Jiaotong University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents a novel valance intersubband laser based on Si-based Si-Ge superlattices grown on a relaxed Si_0.5Ge_0.5 buffer layer. Effective mass theory is used to calculate the inplane valence subband dispersion of Si-Ge superlattices within 6×6 Kane model. Analysis of the inplane energy dispersion shows that the light-hole effective mass is inverted at off zone center region. The laser structure can be designed with a simple quantum cascade scheme. Our calculation shows that with the electrical pump, it is possible to achieve population inversion between the two subbands at local k space where the light-hole effective mass is inverted. Optical gain of the order 100/cm can be achieved with a pumping current density 10 kA/cm².

Original language	English
Title of host publication	Nanoscience and Technology
Publisher	Trans Tech Publications Ltd
Pages	677-680
Number of pages	4
Edition	PART 1
ISBN (Print)	3908451302, 9783908451303
DOIs	https://doi.org/10.4028/3-908451-30-2.677
State	Published - 2007
Event	China International Conference on Nanoscience and Technology, ChinaNANO 2005 - Beijing, China Duration: Jun 9 2005 → Jun 11 2005

Publication series

Name	Solid State Phenomena
Number	PART 1
Volume	121-123
ISSN (Print)	1012-0394

Conference

Conference	China International Conference on Nanoscience and Technology, ChinaNANO 2005
Country/Territory	China
City	Beijing
Period	6/9/05 → 6/11/05

ASJC Scopus Subject Areas

Atomic and Molecular Physics, and Optics
General Materials Science
Condensed Matter Physics

Keywords

Effective mass theory
Ge-Si superlattice
Quantum cascade laser

Access to Document

10.4028/3-908451-30-2.677

Cite this

Lu, Y & Sun, G 2007, Design and simulation of a mid-infrared quantum cascade laser based on Ge-Si superlattices. in Nanoscience and Technology. PART 1 edn, Solid State Phenomena, no. PART 1, vol. 121-123, Trans Tech Publications Ltd, pp. 677-680, China International Conference on Nanoscience and Technology, ChinaNANO 2005, Beijing, China, 6/9/05. https://doi.org/10.4028/3-908451-30-2.677

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title = "Design and simulation of a mid-infrared quantum cascade laser based on Ge-Si superlattices",

abstract = "This paper presents a novel valance intersubband laser based on Si-based Si-Ge superlattices grown on a relaxed Si0.5Ge0.5 buffer layer. Effective mass theory is used to calculate the inplane valence subband dispersion of Si-Ge superlattices within 6{\texttimes}6 Kane model. Analysis of the inplane energy dispersion shows that the light-hole effective mass is inverted at off zone center region. The laser structure can be designed with a simple quantum cascade scheme. Our calculation shows that with the electrical pump, it is possible to achieve population inversion between the two subbands at local k space where the light-hole effective mass is inverted. Optical gain of the order 100/cm can be achieved with a pumping current density 10 kA/cm2.",

keywords = "Effective mass theory, Ge-Si superlattice, Quantum cascade laser",

author = "Yanwu Lu and Gregory Sun",

year = "2007",

doi = "10.4028/3-908451-30-2.677",

language = "English",

isbn = "3908451302",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

number = "PART 1",

pages = "677--680",

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note = "China International Conference on Nanoscience and Technology, ChinaNANO 2005 ; Conference date: 09-06-2005 Through 11-06-2005",

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TY - GEN

T1 - Design and simulation of a mid-infrared quantum cascade laser based on Ge-Si superlattices

AU - Lu, Yanwu

AU - Sun, Gregory

PY - 2007

Y1 - 2007

N2 - This paper presents a novel valance intersubband laser based on Si-based Si-Ge superlattices grown on a relaxed Si0.5Ge0.5 buffer layer. Effective mass theory is used to calculate the inplane valence subband dispersion of Si-Ge superlattices within 6×6 Kane model. Analysis of the inplane energy dispersion shows that the light-hole effective mass is inverted at off zone center region. The laser structure can be designed with a simple quantum cascade scheme. Our calculation shows that with the electrical pump, it is possible to achieve population inversion between the two subbands at local k space where the light-hole effective mass is inverted. Optical gain of the order 100/cm can be achieved with a pumping current density 10 kA/cm2.

AB - This paper presents a novel valance intersubband laser based on Si-based Si-Ge superlattices grown on a relaxed Si0.5Ge0.5 buffer layer. Effective mass theory is used to calculate the inplane valence subband dispersion of Si-Ge superlattices within 6×6 Kane model. Analysis of the inplane energy dispersion shows that the light-hole effective mass is inverted at off zone center region. The laser structure can be designed with a simple quantum cascade scheme. Our calculation shows that with the electrical pump, it is possible to achieve population inversion between the two subbands at local k space where the light-hole effective mass is inverted. Optical gain of the order 100/cm can be achieved with a pumping current density 10 kA/cm2.

KW - Effective mass theory

KW - Ge-Si superlattice

KW - Quantum cascade laser

UR - https://www.scopus.com/pages/publications/38549115198

UR - https://www.scopus.com/pages/publications/38549115198#tab=citedBy

U2 - 10.4028/3-908451-30-2.677

DO - 10.4028/3-908451-30-2.677

M3 - Conference contribution

AN - SCOPUS:38549115198

SN - 3908451302

SN - 9783908451303

T3 - Solid State Phenomena

SP - 677

EP - 680

BT - Nanoscience and Technology

PB - Trans Tech Publications Ltd

T2 - China International Conference on Nanoscience and Technology, ChinaNANO 2005

Y2 - 9 June 2005 through 11 June 2005

ER -

Design and simulation of a mid-infrared quantum cascade laser based on Ge-Si superlattices

Abstract

Publication series

Conference

ASJC Scopus Subject Areas

Keywords

Access to Document

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