Development of SiGeSn technique towards mid-infrared devices in silicon photonics

W. Du; S. Al-Kabi; S. A. Ghetmiri; H. Tran; T. Pham; B. Alharthi; A. Mosleh; J. Margetis; J. Tolle; H. A. Naseem; M. Mortazavi; G. Sun; R. Soref; B. Li; S. Q. Yu

doi:10.1149/07508.0231ecst

Development of SiGeSn technique towards mid-infrared devices in silicon photonics

W. Du
, S. Al-Kabi
, S. A. Ghetmiri
, H. Tran
, T. Pham
, B. Alharthi
, A. Mosleh
, J. Margetis
, J. Tolle
, H. A. Naseem
, M. Mortazavi
, G. Sun
, R. Soref
, B. Li
, S. Q. Yu

Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	SiGe, Ge, and Related Materials
Subtitle of host publication	Materials, Processing, and Devices 7
Editors	J. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, S. Miyazaki
Publisher	Electrochemical Society Inc.
Pages	231-239
Number of pages	9
Edition	8
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/07508.0231ecst
State	Published - 2016
Event	Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: Oct 2 2016 → Oct 7 2016

Publication series

Name	ECS Transactions
Number	8
Volume	75
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	10/2/16 → 10/7/16

ASJC Scopus Subject Areas

General Engineering

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10.1149/07508.0231ecst

Cite this

Du, W., Al-Kabi, S., Ghetmiri, S. A., Tran, H., Pham, T., Alharthi, B., Mosleh, A., Margetis, J., Tolle, J., Naseem, H. A., Mortazavi, M., Sun, G., Soref, R., Li, B., & Yu, S. Q. (2016). Development of SiGeSn technique towards mid-infrared devices in silicon photonics. In J. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, & S. Miyazaki (Eds.), SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (8 ed., pp. 231-239). (ECS Transactions; Vol. 75, No. 8). Electrochemical Society Inc.. https://doi.org/10.1149/07508.0231ecst

Development of SiGeSn technique towards mid-infrared devices in silicon photonics. / Du, W.; Al-Kabi, S.; Ghetmiri, S. A. et al.
SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. ed. / J. Murota; B. Tillack; M. Caymax; G. Masini; D. L. Harame; S. Miyazaki. 8. ed. Electrochemical Society Inc., 2016. p. 231-239 (ECS Transactions; Vol. 75, No. 8).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Du, W, Al-Kabi, S, Ghetmiri, SA, Tran, H, Pham, T, Alharthi, B, Mosleh, A, Margetis, J, Tolle, J, Naseem, HA, Mortazavi, M, Sun, G, Soref, R, Li, B & Yu, SQ 2016, Development of SiGeSn technique towards mid-infrared devices in silicon photonics. in J Murota, B Tillack, M Caymax, G Masini, DL Harame & S Miyazaki (eds), SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 edn, ECS Transactions, no. 8, vol. 75, Electrochemical Society Inc., pp. 231-239, Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 10/2/16. https://doi.org/10.1149/07508.0231ecst

Du W, Al-Kabi S, Ghetmiri SA, Tran H, Pham T, Alharthi B et al. Development of SiGeSn technique towards mid-infrared devices in silicon photonics. In Murota J, Tillack B, Caymax M, Masini G, Harame DL, Miyazaki S, editors, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 ed. Electrochemical Society Inc. 2016. p. 231-239. (ECS Transactions; 8). doi: 10.1149/07508.0231ecst

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title = "Development of SiGeSn technique towards mid-infrared devices in silicon photonics",

author = "W. Du and S. Al-Kabi and Ghetmiri, \{S. A.\} and H. Tran and T. Pham and B. Alharthi and A. Mosleh and J. Margetis and J. Tolle and Naseem, \{H. A.\} and M. Mortazavi and G. Sun and R. Soref and B. Li and Yu, \{S. Q.\}",

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AU - Tran, H.

AU - Pham, T.

AU - Alharthi, B.

AU - Mosleh, A.

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AU - Tolle, J.

AU - Naseem, H. A.

AU - Mortazavi, M.

AU - Sun, G.

AU - Soref, R.

AU - Li, B.

AU - Yu, S. Q.

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PB - Electrochemical Society Inc.

T2 - Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting

Y2 - 2 October 2016 through 7 October 2016

ER -

Development of SiGeSn technique towards mid-infrared devices in silicon photonics

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