Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Seyed Amir Ghetmiri; Wei Du; Joe Margetis; Aboozar Mosleh; Larry Cousar; Benjamin R. Conley; Lucas Domulevicz; Amjad Nazzal; Greg Sun; Richard A. Soref; John Tolle; Baohua Li; Hameed A. Naseem; Shui Qing Yu

doi:10.1063/1.4898597

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Seyed Amir Ghetmiri
, Wei Du
, Joe Margetis
, Aboozar Mosleh
, Larry Cousar
, Benjamin R. Conley
, Lucas Domulevicz
, Amjad Nazzal
, Greg Sun
, Richard A. Soref
, John Tolle
, Baohua Li
, Hameed A. Naseem
, Shui Qing Yu

Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	151109
Journal	Applied Physics Letters
Volume	105
Issue number	15
DOIs	https://doi.org/10.1063/1.4898597
State	Published - Oct 13 2014

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4898597

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@article{8de12beb90c24cbab14be6f48bfc58b8,

title = "Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence",

author = "Ghetmiri, \{Seyed Amir\} and Wei Du and Joe Margetis and Aboozar Mosleh and Larry Cousar and Conley, \{Benjamin R.\} and Lucas Domulevicz and Amjad Nazzal and Greg Sun and Soref, \{Richard A.\} and John Tolle and Baohua Li and Naseem, \{Hameed A.\} and Yu, \{Shui Qing\}",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = oct,

day = "13",

doi = "10.1063/1.4898597",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

AU - Ghetmiri, Seyed Amir

AU - Du, Wei

AU - Margetis, Joe

AU - Mosleh, Aboozar

AU - Cousar, Larry

AU - Conley, Benjamin R.

AU - Domulevicz, Lucas

AU - Nazzal, Amjad

AU - Sun, Greg

AU - Soref, Richard A.

AU - Tolle, John

AU - Li, Baohua

AU - Naseem, Hameed A.

AU - Yu, Shui Qing

PY - 2014/10/13

Y1 - 2014/10/13

UR - https://www.scopus.com/pages/publications/84908032498

UR - https://www.scopus.com/pages/publications/84908032498#tab=citedBy

U2 - 10.1063/1.4898597

DO - 10.1063/1.4898597

M3 - Article

AN - SCOPUS:84908032498

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151109

ER -

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

ASJC Scopus Subject Areas

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