Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

Perry C. Grant; Joe Margetis; Yiyin Zhou; Wei Dou; Grey Abernathy; Andrian Kuchuk; Wei Du; Baohua Li; John Tolle; Jifeng Liu; Greg Sun; Richard A. Soref; Mansour Mortazavi; Shui Qing Yu

doi:10.1063/1.5020035

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

Perry C. Grant
, Joe Margetis
, Yiyin Zhou
, Wei Dou
, Grey Abernathy
, Andrian Kuchuk
, Wei Du
, Baohua Li
, John Tolle
, Jifeng Liu
, Greg Sun
, Richard A. Soref
, Mansour Mortazavi
, Shui Qing Yu

Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	025104
Journal	AIP Advances
Volume	8
Issue number	2
DOIs	https://doi.org/10.1063/1.5020035
State	Published - Feb 1 2018

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.5020035

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@article{e942c84e11e240b7a3f15b7faf5b05ad,

title = "Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate",

author = "Grant, \{Perry C.\} and Joe Margetis and Yiyin Zhou and Wei Dou and Grey Abernathy and Andrian Kuchuk and Wei Du and Baohua Li and John Tolle and Jifeng Liu and Greg Sun and Soref, \{Richard A.\} and Mansour Mortazavi and Yu, \{Shui Qing\}",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

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month = feb,

day = "1",

doi = "10.1063/1.5020035",

language = "English",

volume = "8",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

AU - Grant, Perry C.

AU - Margetis, Joe

AU - Zhou, Yiyin

AU - Dou, Wei

AU - Abernathy, Grey

AU - Kuchuk, Andrian

AU - Du, Wei

AU - Li, Baohua

AU - Tolle, John

AU - Liu, Jifeng

AU - Sun, Greg

AU - Soref, Richard A.

AU - Mortazavi, Mansour

AU - Yu, Shui Qing

PY - 2018/2/1

Y1 - 2018/2/1

UR - https://www.scopus.com/pages/publications/85041851988

UR - https://www.scopus.com/pages/publications/85041851988#tab=citedBy

U2 - 10.1063/1.5020035

DO - 10.1063/1.5020035

M3 - Article

AN - SCOPUS:85041851988

SN - 2158-3226

VL - 8

JO - AIP Advances

JF - AIP Advances

IS - 2

M1 - 025104

ER -

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

ASJC Scopus Subject Areas

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