Direct transition Ge0.94Sn0.06 PIN-diode double heterostructure light emitter at high injection

Wei Du; Seyed Amir Ghetmiri; Aboozar Mosleh; Benjamin R. Conley; Liang Huang; Amjad Nazzal; Richard A. Soref; Greg Sun; John Tolle; Joe Margetis; Hameed A. Naseem; Shui Qing Yu

doi:10.1109/Group4.2014.6962008

Direct transition Ge_0.94Sn_0.06 PIN-diode double heterostructure light emitter at high injection

Wei Du
, Seyed Amir Ghetmiri
, Aboozar Mosleh
, Benjamin R. Conley
, Liang Huang
, Amjad Nazzal
, Richard A. Soref
, Greg Sun
, John Tolle
, Joe Margetis
, Hameed A. Naseem
, Shui Qing Yu

Engineering

University of Arkansas System
Wilkes University
University of Massachusetts Boston
ASM

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The Ge/Ge_0.94Sn_0.06/Ge double heterostructure was grown on a Si substrate via chemical vapor deposition (CVD). The temperature and pump power-dependent photoluminescence (PL) were investigated and the enhanced direct transition at intense pump power was observed.

Original language	English
Title of host publication	IEEE International Conference on Group IV Photonics GFP
Publisher	IEEE Computer Society
Pages	21-22
Number of pages	2
ISBN (Electronic)	9781479922833
DOIs	https://doi.org/10.1109/Group4.2014.6962008
State	Published - Nov 18 2014
Event	11th International Conference on Group IV Photonics, GFP 2014 - Paris, France Duration: Aug 27 2014 → Aug 29 2014

Publication series

Name	IEEE International Conference on Group IV Photonics GFP
ISSN (Print)	1949-2081

Conference

Conference	11th International Conference on Group IV Photonics, GFP 2014
Country/Territory	France
City	Paris
Period	8/27/14 → 8/29/14

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/Group4.2014.6962008

Cite this

Du, W., Ghetmiri, S. A., Mosleh, A., Conley, B. R., Huang, L., Nazzal, A., Soref, R. A., Sun, G., Tolle, J., Margetis, J., Naseem, H. A., & Yu, S. Q. (2014). Direct transition Ge_0.94Sn_0.06 PIN-diode double heterostructure light emitter at high injection. In IEEE International Conference on Group IV Photonics GFP (pp. 21-22). Article 6962008 (IEEE International Conference on Group IV Photonics GFP). IEEE Computer Society. https://doi.org/10.1109/Group4.2014.6962008

Direct transition Ge_0.94Sn_0.06 PIN-diode double heterostructure light emitter at high injection. / Du, Wei; Ghetmiri, Seyed Amir; Mosleh, Aboozar et al.
IEEE International Conference on Group IV Photonics GFP. IEEE Computer Society, 2014. p. 21-22 6962008 (IEEE International Conference on Group IV Photonics GFP).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Du, W, Ghetmiri, SA, Mosleh, A, Conley, BR, Huang, L, Nazzal, A, Soref, RA, Sun, G, Tolle, J, Margetis, J, Naseem, HA & Yu, SQ 2014, Direct transition Ge_0.94Sn_0.06 PIN-diode double heterostructure light emitter at high injection. in IEEE International Conference on Group IV Photonics GFP., 6962008, IEEE International Conference on Group IV Photonics GFP, IEEE Computer Society, pp. 21-22, 11th International Conference on Group IV Photonics, GFP 2014, Paris, France, 8/27/14. https://doi.org/10.1109/Group4.2014.6962008

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abstract = "The Ge/Ge0.94Sn0.06/Ge double heterostructure was grown on a Si substrate via chemical vapor deposition (CVD). The temperature and pump power-dependent photoluminescence (PL) were investigated and the enhanced direct transition at intense pump power was observed.",

author = "Wei Du and Ghetmiri, \{Seyed Amir\} and Aboozar Mosleh and Conley, \{Benjamin R.\} and Liang Huang and Amjad Nazzal and Soref, \{Richard A.\} and Greg Sun and John Tolle and Joe Margetis and Naseem, \{Hameed A.\} and Yu, \{Shui Qing\}",

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AU - Huang, Liang

AU - Nazzal, Amjad

AU - Soref, Richard A.

AU - Sun, Greg

AU - Tolle, John

AU - Margetis, Joe

AU - Naseem, Hameed A.

AU - Yu, Shui Qing

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