Dislocation content of etch pits in hexagonal silicon carbide

Igor I. Khlebnikov; Mohsen B. Lari; Yuri I. Khlebnikov; Robert T. Bondokov; Ramakrishna Ayyagari; Peter Muzykov; Tangali S. Sudarshan; T. Anderson; J. B. Whitlock

Dislocation content of etch pits in hexagonal silicon carbide

Igor I. Khlebnikov
, Mohsen B. Lari
, Yuri I. Khlebnikov
, Robert T. Bondokov
, Ramakrishna Ayyagari
, Peter Muzykov
, Tangali S. Sudarshan
, T. Anderson
, J. B. Whitlock

Management Science & Info Sys

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	H5.4.1-H5.4.6
Journal	Materials Research Society Symposium - Proceedings
Volume	640
State	Published - 2001
Event	Silicon Carbide- Materials, Processing and Devices - Boston, MA, United States Duration: Nov 27 2000 → Nov 29 2000

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{cd5b43f1bea945c8a0ceab790dd9635b,

title = "Dislocation content of etch pits in hexagonal silicon carbide",

author = "Khlebnikov, \{Igor I.\} and Lari, \{Mohsen B.\} and Khlebnikov, \{Yuri I.\} and Bondokov, \{Robert T.\} and Ramakrishna Ayyagari and Peter Muzykov and Sudarshan, \{Tangali S.\} and T. Anderson and Whitlock, \{J. B.\}",

year = "2001",

language = "English",

volume = "640",

pages = "H5.4.1--H5.4.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Silicon Carbide- Materials, Processing and Devices ; Conference date: 27-11-2000 Through 29-11-2000",

}

TY - JOUR

T1 - Dislocation content of etch pits in hexagonal silicon carbide

AU - Khlebnikov, Igor I.

AU - Lari, Mohsen B.

AU - Khlebnikov, Yuri I.

AU - Bondokov, Robert T.

AU - Ayyagari, Ramakrishna

AU - Muzykov, Peter

AU - Sudarshan, Tangali S.

AU - Anderson, T.

AU - Whitlock, J. B.

PY - 2001

Y1 - 2001

UR - https://www.scopus.com/pages/publications/85009837057

UR - https://www.scopus.com/pages/publications/85009837057#tab=citedBy

UR - https://www.scopus.com/pages/publications/17144458190

UR - http://www.scopus.com/inward/citedby.url?scp=17144458190&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:85009837057

SN - 0272-9172

VL - 640

SP - H5.4.1-H5.4.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Silicon Carbide- Materials, Processing and Devices

Y2 - 27 November 2000 through 29 November 2000

ER -

Dislocation content of etch pits in hexagonal silicon carbide

ASJC Scopus Subject Areas

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