Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy

H. Li; C. Chang; H. H. Cheng; G. Sun; R. A. Soref

doi:10.1063/1.4949533

Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy

H. Li
, C. Chang
, H. H. Cheng
, G. Sun
, R. A. Soref

Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	191111
Journal	Applied Physics Letters
Volume	108
Issue number	19
DOIs	https://doi.org/10.1063/1.4949533
State	Published - May 9 2016

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4949533

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title = "Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy",

author = "H. Li and C. Chang and Cheng, \{H. H.\} and G. Sun and Soref, \{R. A.\}",

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year = "2016",

month = may,

day = "9",

doi = "10.1063/1.4949533",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

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T1 - Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy

AU - Li, H.

AU - Chang, C.

AU - Cheng, H. H.

AU - Sun, G.

AU - Soref, R. A.

PY - 2016/5/9

Y1 - 2016/5/9

UR - https://www.scopus.com/pages/publications/84971283810

UR - https://www.scopus.com/pages/publications/84971283810#tab=citedBy

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DO - 10.1063/1.4949533

M3 - Article

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VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 191111

ER -

Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy

ASJC Scopus Subject Areas

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