Dry etch induced defects and H passivation of GaAs surfaces produced by Ch4/H2/Ar plasmas

G. F. McLane; W. R. Buchwald

doi:10.1557/proc-340-221

Dry etch induced defects and H passivation of GaAs surfaces produced by Ch₄/H₂/Ar plasmas

G. F. McLane
, W. R. Buchwald

Engineering

U. S. Army Electronics Technology and Devices Laboratory

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	221-225
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	340
DOIs	https://doi.org/10.1557/proc-340-221
State	Published - 1994
Event	Proceedings of the MRS Symposium - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 7 1994

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{819e40fb354844e983a3559342a96649,

title = "Dry etch induced defects and H passivation of GaAs surfaces produced by Ch4/H2/Ar plasmas",

author = "McLane, \{G. F.\} and Buchwald, \{W. R.\}",

year = "1994",

doi = "10.1557/proc-340-221",

language = "English",

volume = "340",

pages = "221--225",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the MRS Symposium ; Conference date: 04-04-1994 Through 07-04-1994",

}

TY - JOUR

T1 - Dry etch induced defects and H passivation of GaAs surfaces produced by Ch4/H2/Ar plasmas

AU - McLane, G. F.

AU - Buchwald, W. R.

PY - 1994

Y1 - 1994

UR - https://www.scopus.com/pages/publications/0028552714

UR - https://www.scopus.com/pages/publications/0028552714#tab=citedBy

U2 - 10.1557/proc-340-221

DO - 10.1557/proc-340-221

M3 - Conference article

AN - SCOPUS:0028552714

SN - 0272-9172

VL - 340

SP - 221

EP - 225

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the MRS Symposium

Y2 - 4 April 1994 through 7 April 1994

ER -

Dry etch induced defects and H passivation of GaAs surfaces produced by Ch₄/H₂/Ar plasmas

ASJC Scopus Subject Areas

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