Effects of BCl3 magnetron ion etching on deep levels in GaAs

W. R. Buchwald; J. H. Zhao; G. F. McLane; M. Meyyappan

doi:10.1063/1.351947

Effects of BCl₃ magnetron ion etching on deep levels in GaAs

W. R. Buchwald
, J. H. Zhao
, G. F. McLane
, M. Meyyappan

Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	5512-5513
Number of pages	2
Journal	Journal of Applied Physics
Volume	72
Issue number	11
DOIs	https://doi.org/10.1063/1.351947
State	Published - 1992

ASJC Scopus Subject Areas

General Physics and Astronomy

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@article{41e30531a71d4b2c9290c857df9db05b,

title = "Effects of BCl3 magnetron ion etching on deep levels in GaAs",

author = "Buchwald, \{W. R.\} and Zhao, \{J. H.\} and McLane, \{G. F.\} and M. Meyyappan",

year = "1992",

doi = "10.1063/1.351947",

language = "English",

volume = "72",

pages = "5512--5513",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Effects of BCl3 magnetron ion etching on deep levels in GaAs

AU - Buchwald, W. R.

AU - Zhao, J. H.

AU - McLane, G. F.

AU - Meyyappan, M.

PY - 1992

Y1 - 1992

UR - https://www.scopus.com/pages/publications/36449006861

UR - https://www.scopus.com/pages/publications/36449006861#tab=citedBy

U2 - 10.1063/1.351947

DO - 10.1063/1.351947

M3 - Article

AN - SCOPUS:36449006861

SN - 0021-8979

VL - 72

SP - 5512

EP - 5513

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Effects of BCl₃ magnetron ion etching on deep levels in GaAs

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