Electrical and optical output characteristics of InP/InGaAsP pnpn structures grown via LPE

Waiter R. Buchwald; Jian H. Zhao; Long D. Zhu

doi:10.1109/SARNOF.1993.657976

Electrical and optical output characteristics of InP/InGaAsP pnpn structures grown via LPE

Waiter R. Buchwald
, Jian H. Zhao
, Long D. Zhu

Engineering

Rutgers - The State University of New Jersey, New Brunswick
U. S. Army Electronics Technology and Devices Laboratory

Research output: Contribution to conference › Paper › peer-review

Abstract

Gated p(1nP)-n(InP)-p(1nGaAsF')-n(1nP) struchires have been fabricated via LPE. These devices are shown to have gate controlled, thyristor like, DC switching characteristics as well as gate controlled optical output at 940nm and 1280nm. The switching characteristics of these devices are also reported.

Original language	English
Pages	183-186
Number of pages	4
DOIs	https://doi.org/10.1109/SARNOF.1993.657976
State	Published - 1993
Event	9th Annual IEEE Princeton Section Sarnoff Symposium, SARNOF 1993 - Princeton, United States Duration: Mar 26 1993 → …

Conference

Conference	9th Annual IEEE Princeton Section Sarnoff Symposium, SARNOF 1993
Country/Territory	United States
City	Princeton
Period	3/26/93 → …

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
Instrumentation
Atomic and Molecular Physics, and Optics

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10.1109/SARNOF.1993.657976

Cite this

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title = "Electrical and optical output characteristics of InP/InGaAsP pnpn structures grown via LPE",

abstract = "Gated p(1nP)-n(InP)-p(1nGaAsF')-n(1nP) struchires have been fabricated via LPE. These devices are shown to have gate controlled, thyristor like, DC switching characteristics as well as gate controlled optical output at 940nm and 1280nm. The switching characteristics of these devices are also reported.",

author = "Buchwald, \{Waiter R.\} and Zhao, \{Jian H.\} and Zhu, \{Long D.\}",

note = "Publisher Copyright: {\textcopyright} 1993 IEEE.; 9th Annual IEEE Princeton Section Sarnoff Symposium, SARNOF 1993 ; Conference date: 26-03-1993",

year = "1993",

doi = "10.1109/SARNOF.1993.657976",

language = "English",

pages = "183--186",

}

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T1 - Electrical and optical output characteristics of InP/InGaAsP pnpn structures grown via LPE

AU - Buchwald, Waiter R.

AU - Zhao, Jian H.

AU - Zhu, Long D.

PY - 1993

Y1 - 1993

N2 - Gated p(1nP)-n(InP)-p(1nGaAsF')-n(1nP) struchires have been fabricated via LPE. These devices are shown to have gate controlled, thyristor like, DC switching characteristics as well as gate controlled optical output at 940nm and 1280nm. The switching characteristics of these devices are also reported.

AB - Gated p(1nP)-n(InP)-p(1nGaAsF')-n(1nP) struchires have been fabricated via LPE. These devices are shown to have gate controlled, thyristor like, DC switching characteristics as well as gate controlled optical output at 940nm and 1280nm. The switching characteristics of these devices are also reported.

UR - https://www.scopus.com/pages/publications/85065589071

UR - https://www.scopus.com/pages/publications/85065589071#tab=citedBy

U2 - 10.1109/SARNOF.1993.657976

DO - 10.1109/SARNOF.1993.657976

M3 - Paper

AN - SCOPUS:85065589071

SP - 183

EP - 186

T2 - 9th Annual IEEE Princeton Section Sarnoff Symposium, SARNOF 1993

Y2 - 26 March 1993

ER -

Electrical and optical output characteristics of InP/InGaAsP pnpn structures grown via LPE

Abstract

Conference

ASJC Scopus Subject Areas

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