Skip to main navigation Skip to search Skip to main content

Electrical and optical output characteristics of InP/InGaAsP pnpn structures grown via LPE

  • Rutgers - The State University of New Jersey, New Brunswick
  • U. S. Army Electronics Technology and Devices Laboratory

Research output: Contribution to conferencePaperpeer-review

Original languageEnglish
Pages183-186
Number of pages4
DOIs
StatePublished - 1993
Event9th Annual IEEE Princeton Section Sarnoff Symposium, SARNOF 1993 - Princeton, United States
Duration: Mar 26 1993 → …

Conference

Conference9th Annual IEEE Princeton Section Sarnoff Symposium, SARNOF 1993
Country/TerritoryUnited States
CityPrinceton
Period3/26/93 → …

ASJC Scopus Subject Areas

  • Electrical and Electronic Engineering
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Fingerprint

Dive into the research topics of 'Electrical and optical output characteristics of InP/InGaAsP pnpn structures grown via LPE'. Together they form a unique fingerprint.

Cite this