Electrically-detected magnetic resonance near the p-doped/n-doped interface of Si junction diodes

E. H. Poindexter; F. C. Rong; W. R. Buchwald; G. J. Gerardi; D. J. Keeble; W. L. Warren

doi:10.1016/0927-7757(93)80458-Q

Electrically-detected magnetic resonance near the p-doped/n-doped interface of Si junction diodes

E. H. Poindexter
, F. C. Rong
, W. R. Buchwald
, G. J. Gerardi
, D. J. Keeble
, W. L. Warren

Engineering

U. S. Army Electronics Technology and Devices Laboratory
William Paterson University
Michigan Technological University
Sandia National Laboratories, New Mexico

Research output: Contribution to journal › Article › peer-review

Abstract

Hyperfine structure has been observed in the electrically-detected magnetic resonance signal from a silicon p-n junction diode. By comparing the g value, hyperfine parameters, and bandgap energy level with known species having suitable abundances of isotopes with I = 1 2, the center is tentatively assigned as a platinum moiety, of presently undetermined structure. The observation indicates the usefulness of EDMR in the study of defects in ultrasmall Si devices, and raises certain questions regarding the current theories of spin-dependent recombination.

Original language	English
Pages (from-to)	119-125
Number of pages	7
Journal	Colloids and Surfaces A: Physicochemical and Engineering Aspects
Volume	72
Issue number	C
DOIs	https://doi.org/10.1016/0927-7757(93)80458-Q
State	Published - Jun 17 1993

ASJC Scopus Subject Areas

Surfaces and Interfaces
Physical and Theoretical Chemistry
Colloid and Surface Chemistry

Keywords

Electrically-detected magnetic resonance
silicon junction diodes.

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10.1016/0927-7757(93)80458-Q

Cite this

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title = "Electrically-detected magnetic resonance near the p-doped/n-doped interface of Si junction diodes",

abstract = "Hyperfine structure has been observed in the electrically-detected magnetic resonance signal from a silicon p-n junction diode. By comparing the g value, hyperfine parameters, and bandgap energy level with known species having suitable abundances of isotopes with I = 1 2, the center is tentatively assigned as a platinum moiety, of presently undetermined structure. The observation indicates the usefulness of EDMR in the study of defects in ultrasmall Si devices, and raises certain questions regarding the current theories of spin-dependent recombination.",

keywords = "Electrically-detected magnetic resonance, silicon junction diodes.",

author = "Poindexter, \{E. H.\} and Rong, \{F. C.\} and Buchwald, \{W. R.\} and Gerardi, \{G. J.\} and Keeble, \{D. J.\} and Warren, \{W. L.\}",

year = "1993",

month = jun,

day = "17",

doi = "10.1016/0927-7757(93)80458-Q",

language = "English",

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pages = "119--125",

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T1 - Electrically-detected magnetic resonance near the p-doped/n-doped interface of Si junction diodes

AU - Poindexter, E. H.

AU - Rong, F. C.

AU - Buchwald, W. R.

AU - Gerardi, G. J.

AU - Keeble, D. J.

AU - Warren, W. L.

PY - 1993/6/17

Y1 - 1993/6/17

N2 - Hyperfine structure has been observed in the electrically-detected magnetic resonance signal from a silicon p-n junction diode. By comparing the g value, hyperfine parameters, and bandgap energy level with known species having suitable abundances of isotopes with I = 1 2, the center is tentatively assigned as a platinum moiety, of presently undetermined structure. The observation indicates the usefulness of EDMR in the study of defects in ultrasmall Si devices, and raises certain questions regarding the current theories of spin-dependent recombination.

AB - Hyperfine structure has been observed in the electrically-detected magnetic resonance signal from a silicon p-n junction diode. By comparing the g value, hyperfine parameters, and bandgap energy level with known species having suitable abundances of isotopes with I = 1 2, the center is tentatively assigned as a platinum moiety, of presently undetermined structure. The observation indicates the usefulness of EDMR in the study of defects in ultrasmall Si devices, and raises certain questions regarding the current theories of spin-dependent recombination.

KW - Electrically-detected magnetic resonance

KW - silicon junction diodes.

UR - https://www.scopus.com/pages/publications/43949171099

UR - https://www.scopus.com/pages/publications/43949171099#tab=citedBy

U2 - 10.1016/0927-7757(93)80458-Q

DO - 10.1016/0927-7757(93)80458-Q

M3 - Article

AN - SCOPUS:43949171099

SN - 0927-7757

VL - 72

SP - 119

EP - 125

JO - Colloids and Surfaces A: Physicochemical and Engineering Aspects

JF - Colloids and Surfaces A: Physicochemical and Engineering Aspects

IS - C

ER -

Electrically-detected magnetic resonance near the p-doped/n-doped interface of Si junction diodes

Abstract

ASJC Scopus Subject Areas

Keywords

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