Electrically detected magnetic resonance of a transition metal related recombination center in Si p-n diodes

F. C. Rong; G. J. Gerardi; W. R. Buchwald; E. H. Poindexter; M. T. Umlor; D. J. Keeble; W. L. Warren

doi:10.1063/1.106569

Electrically detected magnetic resonance of a transition metal related recombination center in Si p-n diodes

F. C. Rong
, G. J. Gerardi
, W. R. Buchwald
, E. H. Poindexter
, M. T. Umlor
, D. J. Keeble
, W. L. Warren

Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	610-612
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	5
DOIs	https://doi.org/10.1063/1.106569
State	Published - 1992

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.106569

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@article{c60027f20b2847739c2be4a780cef871,

title = "Electrically detected magnetic resonance of a transition metal related recombination center in Si p-n diodes",

author = "Rong, \{F. C.\} and Gerardi, \{G. J.\} and Buchwald, \{W. R.\} and Poindexter, \{E. H.\} and Umlor, \{M. T.\} and Keeble, \{D. J.\} and Warren, \{W. L.\}",

year = "1992",

doi = "10.1063/1.106569",

language = "English",

volume = "60",

pages = "610--612",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Electrically detected magnetic resonance of a transition metal related recombination center in Si p-n diodes

AU - Rong, F. C.

AU - Gerardi, G. J.

AU - Buchwald, W. R.

AU - Poindexter, E. H.

AU - Umlor, M. T.

AU - Keeble, D. J.

AU - Warren, W. L.

PY - 1992

Y1 - 1992

UR - https://www.scopus.com/pages/publications/21544436648

UR - https://www.scopus.com/pages/publications/21544436648#tab=citedBy

U2 - 10.1063/1.106569

DO - 10.1063/1.106569

M3 - Article

AN - SCOPUS:21544436648

SN - 0003-6951

VL - 60

SP - 610

EP - 612

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Electrically detected magnetic resonance of a transition metal related recombination center in Si p-n diodes

ASJC Scopus Subject Areas

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