Electron and hole traps in heavily compensated InGaAs/GaAs heterostructures

W. R. Buchwald; J. H. Zhao; M. Harmatz; E. H. Poindexter

doi:10.1016/0038-1101(93)90126-B

Electron and hole traps in heavily compensated InGaAs/GaAs heterostructures

W. R. Buchwald
, J. H. Zhao
, M. Harmatz
, E. H. Poindexter

Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1077-1082
Number of pages	6
Journal	Solid-State Electronics
Volume	36
Issue number	7
DOIs	https://doi.org/10.1016/0038-1101(93)90126-B
State	Published - Jul 1993

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/0038-1101(93)90126-B

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@article{814750541c724fb2903248811b69eb62,

title = "Electron and hole traps in heavily compensated InGaAs/GaAs heterostructures",

author = "Buchwald, \{W. R.\} and Zhao, \{J. H.\} and M. Harmatz and Poindexter, \{E. H.\}",

year = "1993",

month = jul,

doi = "10.1016/0038-1101(93)90126-B",

language = "English",

volume = "36",

pages = "1077--1082",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "7",

}

TY - JOUR

T1 - Electron and hole traps in heavily compensated InGaAs/GaAs heterostructures

AU - Buchwald, W. R.

AU - Zhao, J. H.

AU - Harmatz, M.

AU - Poindexter, E. H.

PY - 1993/7

Y1 - 1993/7

UR - https://www.scopus.com/pages/publications/0027627356

UR - https://www.scopus.com/pages/publications/0027627356#tab=citedBy

U2 - 10.1016/0038-1101(93)90126-B

DO - 10.1016/0038-1101(93)90126-B

M3 - Article

AN - SCOPUS:0027627356

SN - 0038-1101

VL - 36

SP - 1077

EP - 1082

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 7

ER -

Electron and hole traps in heavily compensated InGaAs/GaAs heterostructures

ASJC Scopus Subject Areas

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