Electron tunneling in a strained n -type Si1-x Gex /Si/ Si1-x Gex double-barrier structure

K. M. Hung; T. H. Cheng; W. P. Huang; K. Y. Wang; H. H. Cheng; G. Sun; R. A. Soref

doi:10.1063/1.2991295

Electron tunneling in a strained n -type Si_1-x Ge_x /Si/ Si_1-x Ge_x double-barrier structure

K. M. Hung
, T. H. Cheng
, W. P. Huang
, K. Y. Wang
, H. H. Cheng
, G. Sun
, R. A. Soref

Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	123509
Journal	Applied Physics Letters
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.2991295
State	Published - 2008

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2991295

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title = "Electron tunneling in a strained n -type Si1-x Gex /Si/ Si1-x Gex double-barrier structure",

author = "Hung, \{K. M.\} and Cheng, \{T. H.\} and Huang, \{W. P.\} and Wang, \{K. Y.\} and Cheng, \{H. H.\} and G. Sun and Soref, \{R. A.\}",

year = "2008",

doi = "10.1063/1.2991295",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Electron tunneling in a strained n -type Si1-x Gex /Si/ Si1-x Gex double-barrier structure

AU - Hung, K. M.

AU - Cheng, T. H.

AU - Huang, W. P.

AU - Wang, K. Y.

AU - Cheng, H. H.

AU - Sun, G.

AU - Soref, R. A.

PY - 2008

Y1 - 2008

UR - https://www.scopus.com/pages/publications/52949127947

UR - https://www.scopus.com/pages/publications/52949127947#tab=citedBy

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DO - 10.1063/1.2991295

M3 - Article

AN - SCOPUS:52949127947

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 123509

ER -

Electron tunneling in a strained n -type Si_1-x Ge_x /Si/ Si_1-x Ge_x double-barrier structure

ASJC Scopus Subject Areas

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