Electron tunneling in a strained n -type Si1-x Gex /Si/ Si1-x Gex double-barrier structure

K. M. Hung; T. H. Cheng; W. P. Huang; K. Y. Wang; H. H. Cheng; G. Sun; R. A. Soref

doi:10.1063/1.2991295

Electron tunneling in a strained n -type Si_1-x Ge_x /Si/ Si_1-x Ge_x double-barrier structure

K. M. Hung
, T. H. Cheng
, W. P. Huang
, K. Y. Wang
, H. H. Cheng
, G. Sun
, R. A. Soref

Engineering

National Kaohsiung University of Science and Technology
National Taiwan University
Air Force Research Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

We report electrical measurements on an n -type Si_1-x Ge _x /Si/ Si_1-x Ge_x double-barrier structure grown on a partially relaxed Si_1-y Gey buffer layer. Resonance tunneling of Δ₄ band electrons is demonstrated. This is attributed to the strain splitting in the SiGe buffer layer where the Δ₄ band is lowest in energy at the electrode. Since the Δ₄ band electrons have a much lighter effective mass along the direction of tunneling current in comparison with that of the Δ₂ band electrons, this work presents an advantage over those SiGe resonant-tunneling diodes in which tunneling of Δ₂ band electrons is employed.

Original language	English
Article number	123509
Journal	Applied Physics Letters
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.2991295
State	Published - 2008

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2991295

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abstract = "We report electrical measurements on an n -type Si1-x Ge x /Si/ Si1-x Gex double-barrier structure grown on a partially relaxed Si1-y Gey buffer layer. Resonance tunneling of Δ4 band electrons is demonstrated. This is attributed to the strain splitting in the SiGe buffer layer where the Δ4 band is lowest in energy at the electrode. Since the Δ4 band electrons have a much lighter effective mass along the direction of tunneling current in comparison with that of the Δ2 band electrons, this work presents an advantage over those SiGe resonant-tunneling diodes in which tunneling of Δ2 band electrons is employed.",

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T1 - Electron tunneling in a strained n -type Si1-x Gex /Si/ Si1-x Gex double-barrier structure

AU - Hung, K. M.

AU - Cheng, T. H.

AU - Huang, W. P.

AU - Wang, K. Y.

AU - Cheng, H. H.

AU - Sun, G.

AU - Soref, R. A.

PY - 2008

Y1 - 2008

N2 - We report electrical measurements on an n -type Si1-x Ge x /Si/ Si1-x Gex double-barrier structure grown on a partially relaxed Si1-y Gey buffer layer. Resonance tunneling of Δ4 band electrons is demonstrated. This is attributed to the strain splitting in the SiGe buffer layer where the Δ4 band is lowest in energy at the electrode. Since the Δ4 band electrons have a much lighter effective mass along the direction of tunneling current in comparison with that of the Δ2 band electrons, this work presents an advantage over those SiGe resonant-tunneling diodes in which tunneling of Δ2 band electrons is employed.

AB - We report electrical measurements on an n -type Si1-x Ge x /Si/ Si1-x Gex double-barrier structure grown on a partially relaxed Si1-y Gey buffer layer. Resonance tunneling of Δ4 band electrons is demonstrated. This is attributed to the strain splitting in the SiGe buffer layer where the Δ4 band is lowest in energy at the electrode. Since the Δ4 band electrons have a much lighter effective mass along the direction of tunneling current in comparison with that of the Δ2 band electrons, this work presents an advantage over those SiGe resonant-tunneling diodes in which tunneling of Δ2 band electrons is employed.

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ER -

Electron tunneling in a strained n -type Si_1-x Ge_x /Si/ Si_1-x Ge_x double-barrier structure

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