Enhanced responsivity up to 2.85 A/W of Si-based Ge0.9Sn0.1 photoconductors by integration of interdigitated electrodes

Thach Pham; Benjamin R. Conley; Joe Margetis; Huong Tran; Seyed Amir Ghetmiri; Aboozar Mosleh; Wei Du; Greg Sun; Richard A. Soref; John Tolle; Hameed A. Naseem; Baohua Li; Shui Qing Yu

doi:10.1364/CLEO_SI.2015.STh1I.7

Enhanced responsivity up to 2.85 A/W of Si-based Ge_0.9Sn_0.1 photoconductors by integration of interdigitated electrodes

Thach Pham
, Benjamin R. Conley
, Joe Margetis
, Huong Tran
, Seyed Amir Ghetmiri
, Aboozar Mosleh
, Wei Du
, Greg Sun
, Richard A. Soref
, John Tolle
, Hameed A. Naseem
, Baohua Li
, Shui Qing Yu

Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO-SI 2015
Publisher	Optical Society of America (OSA)
Pages	2267
Number of pages	1
ISBN (Electronic)	9781557529688
DOIs	https://doi.org/10.1364/CLEO_SI.2015.STh1I.7
State	Published - May 4 2015
Event	CLEO: Science and Innovations, CLEO-SI 2015 - San Jose, United States Duration: May 10 2015 → May 15 2015

Publication series

Name	CLEO: Science and Innovations, CLEO-SI 2015

Conference

Conference	CLEO: Science and Innovations, CLEO-SI 2015
Country/Territory	United States
City	San Jose
Period	5/10/15 → 5/15/15

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Access to Document

10.1364/CLEO_SI.2015.STh1I.7

Cite this

Pham, T., Conley, B. R., Margetis, J., Tran, H., Ghetmiri, S. A., Mosleh, A., Du, W., Sun, G., Soref, R. A., Tolle, J., Naseem, H. A., Li, B., & Yu, S. Q. (2015). Enhanced responsivity up to 2.85 A/W of Si-based Ge_0.9Sn_0.1 photoconductors by integration of interdigitated electrodes. In CLEO: Science and Innovations, CLEO-SI 2015 (pp. 2267). (CLEO: Science and Innovations, CLEO-SI 2015). Optical Society of America (OSA). https://doi.org/10.1364/CLEO_SI.2015.STh1I.7

Enhanced responsivity up to 2.85 A/W of Si-based Ge_0.9Sn_0.1 photoconductors by integration of interdigitated electrodes. / Pham, Thach; Conley, Benjamin R.; Margetis, Joe et al.
CLEO: Science and Innovations, CLEO-SI 2015. Optical Society of America (OSA), 2015. p. 2267 (CLEO: Science and Innovations, CLEO-SI 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Pham, T, Conley, BR, Margetis, J, Tran, H, Ghetmiri, SA, Mosleh, A, Du, W, Sun, G, Soref, RA, Tolle, J, Naseem, HA, Li, B & Yu, SQ 2015, Enhanced responsivity up to 2.85 A/W of Si-based Ge_0.9Sn_0.1 photoconductors by integration of interdigitated electrodes. in CLEO: Science and Innovations, CLEO-SI 2015. CLEO: Science and Innovations, CLEO-SI 2015, Optical Society of America (OSA), pp. 2267, CLEO: Science and Innovations, CLEO-SI 2015, San Jose, United States, 5/10/15. https://doi.org/10.1364/CLEO_SI.2015.STh1I.7

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