Extended infrared absorption to 2.2 μm with Ge1-xSnx photodetectors grown on silicon

Benjamin R. Conley; Liang Huang; Sayed Amir Ghetmiri; Aboozar Mosleh; Wei Du; Greg Sun; Richard Soref; John Tolle; Hameed A. Naseem; Shui Qing Yu

Extended infrared absorption to 2.2 μm with Ge_1-xSn_x photodetectors grown on silicon

Benjamin R. Conley
, Liang Huang
, Sayed Amir Ghetmiri
, Aboozar Mosleh
, Wei Du
, Greg Sun
, Richard Soref
, John Tolle
, Hameed A. Naseem
, Shui Qing Yu

Engineering

University of Arkansas System
University of Massachusetts Boston
ASM

Research output: Contribution to conference › Paper › peer-review

Abstract

Thin film Ge_1-xSn_x photodetectors fabricated on Si using a CMOS compatible process had responsivities at 1.55 μm of 6.59, 1.49, 2.63, and 0.84 mA/W for 0.9, 2.57, 3.2, and 7.0 % Sn. Spectral response for a Ge0.93Sn0.07 photodetector had extended infrared response out to 2.2 μm.

Original language	English
State	Published - 2014
Event	2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States Duration: Jun 8 2014 → Jun 13 2014

Conference

Conference	2014 Conference on Lasers and Electro-Optics, CLEO 2014
Country/Territory	United States
City	San Jose
Period	6/8/14 → 6/13/14

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Cite this

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title = "Extended infrared absorption to 2.2 μm with Ge1-xSnx photodetectors grown on silicon",

abstract = "Thin film Ge1-xSnx photodetectors fabricated on Si using a CMOS compatible process had responsivities at 1.55 μm of 6.59, 1.49, 2.63, and 0.84 mA/W for 0.9, 2.57, 3.2, and 7.0 \% Sn. Spectral response for a Ge0.93Sn0.07 photodetector had extended infrared response out to 2.2 μm.",

author = "Conley, \{Benjamin R.\} and Liang Huang and Ghetmiri, \{Sayed Amir\} and Aboozar Mosleh and Wei Du and Greg Sun and Richard Soref and John Tolle and Naseem, \{Hameed A.\} and Yu, \{Shui Qing\}",

note = "Publisher Copyright: {\textcopyright} 2014 Optical Society of America.; 2014 Conference on Lasers and Electro-Optics, CLEO 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

language = "English",

}

TY - CONF

T1 - Extended infrared absorption to 2.2 μm with Ge1-xSnx photodetectors grown on silicon

AU - Conley, Benjamin R.

AU - Huang, Liang

AU - Ghetmiri, Sayed Amir

AU - Mosleh, Aboozar

AU - Du, Wei

AU - Sun, Greg

AU - Soref, Richard

AU - Tolle, John

AU - Naseem, Hameed A.

AU - Yu, Shui Qing

PY - 2014

Y1 - 2014

N2 - Thin film Ge1-xSnx photodetectors fabricated on Si using a CMOS compatible process had responsivities at 1.55 μm of 6.59, 1.49, 2.63, and 0.84 mA/W for 0.9, 2.57, 3.2, and 7.0 % Sn. Spectral response for a Ge0.93Sn0.07 photodetector had extended infrared response out to 2.2 μm.

AB - Thin film Ge1-xSnx photodetectors fabricated on Si using a CMOS compatible process had responsivities at 1.55 μm of 6.59, 1.49, 2.63, and 0.84 mA/W for 0.9, 2.57, 3.2, and 7.0 % Sn. Spectral response for a Ge0.93Sn0.07 photodetector had extended infrared response out to 2.2 μm.

UR - https://www.scopus.com/pages/publications/84944710704

UR - https://www.scopus.com/pages/publications/84944710704#tab=citedBy

M3 - Paper

AN - SCOPUS:84944710704

T2 - 2014 Conference on Lasers and Electro-Optics, CLEO 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Extended infrared absorption to 2.2 μm with Ge_1-xSn_x photodetectors grown on silicon

Abstract

Conference

ASJC Scopus Subject Areas

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