Extended infrared absorption to 2.2 μm with Ge1-xSnx photodetectors grown on silicon

Benjamin R. Conley; Liang Huang; Sayed Amir Ghetmiri; Aboozar Mosleh; Wei Du; Greg Sun; Richard Soref; John Tolle; Hameed A. Naseem; Shui Qing Yu

doi:10.1364/cleo_si.2014.sm2h.5

Extended infrared absorption to 2.2 μm with Ge_1-xSn_x photodetectors grown on silicon

Benjamin R. Conley
, Liang Huang
, Sayed Amir Ghetmiri
, Aboozar Mosleh
, Wei Du
, Greg Sun
, Richard Soref
, John Tolle
, Hameed A. Naseem
, Shui Qing Yu

Engineering

University of Arkansas System
University of Massachusetts Boston
ASM

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Thin film Ge_1-xSn_x photodetectors fabricated on Si using a CMOS compatible process had responsivities at 1.55 μm of 6.59, 1.49, 2.63, and 0.84 mA/W for 0.9, 2.57, 3.2, and 7.0 % Sn. Spectral response for a Ge_0.93Sn_0.07 photodetector had extended infrared response out to 2.2 μm.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2014
Publisher	Optical Society of America (OSA)
ISBN (Print)	9781557529992, 9781557529992
DOIs	https://doi.org/10.1364/cleo_si.2014.sm2h.5
State	Published - 2014
Event	CLEO: Science and Innovations, CLEO_SI 2014 - San Jose, CA, United States Duration: Jun 8 2014 → Jun 13 2014

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: Science and Innovations, CLEO_SI 2014
Country/Territory	United States
City	San Jose, CA
Period	6/8/14 → 6/13/14

ASJC Scopus Subject Areas

Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.1364/cleo_si.2014.sm2h.5

Cite this

Conley, B. R., Huang, L., Ghetmiri, S. A., Mosleh, A., Du, W., Sun, G., Soref, R., Tolle, J., Naseem, H. A., & Yu, S. Q. (2014). Extended infrared absorption to 2.2 μm with Ge_1-xSn_x photodetectors grown on silicon. In CLEO: Science and Innovations, CLEO_SI 2014 (Optics InfoBase Conference Papers). Optical Society of America (OSA). https://doi.org/10.1364/cleo_si.2014.sm2h.5

Conley, BR, Huang, L, Ghetmiri, SA, Mosleh, A, Du, W, Sun, G, Soref, R, Tolle, J, Naseem, HA & Yu, SQ 2014, Extended infrared absorption to 2.2 μm with Ge_1-xSn_x photodetectors grown on silicon. in CLEO: Science and Innovations, CLEO_SI 2014. Optics InfoBase Conference Papers, Optical Society of America (OSA), CLEO: Science and Innovations, CLEO_SI 2014, San Jose, CA, United States, 6/8/14. https://doi.org/10.1364/cleo_si.2014.sm2h.5

@inproceedings{216ace09afef4c638041c43152e9acb7,

title = "Extended infrared absorption to 2.2 μm with Ge1-xSnx photodetectors grown on silicon",

abstract = "Thin film Ge1-xSnx photodetectors fabricated on Si using a CMOS compatible process had responsivities at 1.55 μm of 6.59, 1.49, 2.63, and 0.84 mA/W for 0.9, 2.57, 3.2, and 7.0 \% Sn. Spectral response for a Ge0.93Sn0.07 photodetector had extended infrared response out to 2.2 μm.",

author = "Conley, \{Benjamin R.\} and Liang Huang and Ghetmiri, \{Sayed Amir\} and Aboozar Mosleh and Wei Du and Greg Sun and Richard Soref and John Tolle and Naseem, \{Hameed A.\} and Yu, \{Shui Qing\}",

year = "2014",

doi = "10.1364/cleo\_si.2014.sm2h.5",

language = "English",

isbn = "9781557529992",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America (OSA)",

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note = "CLEO: Science and Innovations, CLEO\_SI 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

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T1 - Extended infrared absorption to 2.2 μm with Ge1-xSnx photodetectors grown on silicon

AU - Conley, Benjamin R.

AU - Huang, Liang

AU - Ghetmiri, Sayed Amir

AU - Mosleh, Aboozar

AU - Du, Wei

AU - Sun, Greg

AU - Soref, Richard

AU - Tolle, John

AU - Naseem, Hameed A.

AU - Yu, Shui Qing

PY - 2014

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N2 - Thin film Ge1-xSnx photodetectors fabricated on Si using a CMOS compatible process had responsivities at 1.55 μm of 6.59, 1.49, 2.63, and 0.84 mA/W for 0.9, 2.57, 3.2, and 7.0 % Sn. Spectral response for a Ge0.93Sn0.07 photodetector had extended infrared response out to 2.2 μm.

AB - Thin film Ge1-xSnx photodetectors fabricated on Si using a CMOS compatible process had responsivities at 1.55 μm of 6.59, 1.49, 2.63, and 0.84 mA/W for 0.9, 2.57, 3.2, and 7.0 % Sn. Spectral response for a Ge0.93Sn0.07 photodetector had extended infrared response out to 2.2 μm.

UR - https://www.scopus.com/pages/publications/85085775869

UR - https://www.scopus.com/pages/publications/85085775869#tab=citedBy

U2 - 10.1364/cleo_si.2014.sm2h.5

DO - 10.1364/cleo_si.2014.sm2h.5

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AN - SCOPUS:85085775869

SN - 9781557529992

T3 - Optics InfoBase Conference Papers

BT - CLEO

PB - Optical Society of America (OSA)

T2 - CLEO: Science and Innovations, CLEO_SI 2014

Y2 - 8 June 2014 through 13 June 2014

ER -