Fabrication and characterization of 6H-SiC switching devices

K. Xie; J. H. Zhao; J. Flemish; T. Burke; W. Buchwald; L. Kingsley; H. Singh; M. Weiner

Fabrication and characterization of 6H-SiC switching devices

K. Xie
, J. H. Zhao
, J. Flemish
, T. Burke
, W. Buchwald
, L. Kingsley
, H. Singh
, M. Weiner

Engineering

Rutgers - The State University of New Jersey, New Brunswick

Research output: Contribution to conference › Paper › peer-review

Abstract

Various 6H-SiC switches, including Schottky diodes, p⁺n diodes and thyristors have been fabricated and characterized using optical and electrical triggering. Mesa etching is accomplished by electron cyclotron resonant reactive ion etching using CF₄ and O₂ mixture, with a high etch rate of 80 nm/min and an excellent surface morphology. The optical triggering by 266 nm laser light yields a near 100% switching efficiency in Pt and Au 6H-SiC Schottky diode switches, and a 75% switching efficiency in p⁺n 6H-SiC diode switches. A breakdown field of more than 1×10⁶ V/cm is obtained in p⁺n diode. Operation of SiC thyristor is demonstrated. A relatively long turn-on time of 170 ns is believed to be due to a long base region and a short carrier lifetime in 6H-SiC.

Original language	English
Pages	821-824
Number of pages	4
State	Published - 1993
Event	Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2) - Albuquerque, NM, USA Duration: Jun 21 1993 → Jun 23 1993

Conference

Conference	Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2)
City	Albuquerque, NM, USA
Period	6/21/93 → 6/23/93

ASJC Scopus Subject Areas

General Engineering

Cite this

@conference{2f7ec403171942a394287913bb06592c,

title = "Fabrication and characterization of 6H-SiC switching devices",

abstract = "Various 6H-SiC switches, including Schottky diodes, p+n diodes and thyristors have been fabricated and characterized using optical and electrical triggering. Mesa etching is accomplished by electron cyclotron resonant reactive ion etching using CF4 and O2 mixture, with a high etch rate of 80 nm/min and an excellent surface morphology. The optical triggering by 266 nm laser light yields a near 100\% switching efficiency in Pt and Au 6H-SiC Schottky diode switches, and a 75\% switching efficiency in p+n 6H-SiC diode switches. A breakdown field of more than 1{\texttimes}106 V/cm is obtained in p+n diode. Operation of SiC thyristor is demonstrated. A relatively long turn-on time of 170 ns is believed to be due to a long base region and a short carrier lifetime in 6H-SiC.",

author = "K. Xie and Zhao, \{J. H.\} and J. Flemish and T. Burke and W. Buchwald and L. Kingsley and H. Singh and M. Weiner",

year = "1993",

language = "English",

pages = "821--824",

note = "Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2) ; Conference date: 21-06-1993 Through 23-06-1993",

}

TY - CONF

T1 - Fabrication and characterization of 6H-SiC switching devices

AU - Xie, K.

AU - Zhao, J. H.

AU - Flemish, J.

AU - Burke, T.

AU - Buchwald, W.

AU - Kingsley, L.

AU - Singh, H.

AU - Weiner, M.

PY - 1993

Y1 - 1993

N2 - Various 6H-SiC switches, including Schottky diodes, p+n diodes and thyristors have been fabricated and characterized using optical and electrical triggering. Mesa etching is accomplished by electron cyclotron resonant reactive ion etching using CF4 and O2 mixture, with a high etch rate of 80 nm/min and an excellent surface morphology. The optical triggering by 266 nm laser light yields a near 100% switching efficiency in Pt and Au 6H-SiC Schottky diode switches, and a 75% switching efficiency in p+n 6H-SiC diode switches. A breakdown field of more than 1×106 V/cm is obtained in p+n diode. Operation of SiC thyristor is demonstrated. A relatively long turn-on time of 170 ns is believed to be due to a long base region and a short carrier lifetime in 6H-SiC.

AB - Various 6H-SiC switches, including Schottky diodes, p+n diodes and thyristors have been fabricated and characterized using optical and electrical triggering. Mesa etching is accomplished by electron cyclotron resonant reactive ion etching using CF4 and O2 mixture, with a high etch rate of 80 nm/min and an excellent surface morphology. The optical triggering by 266 nm laser light yields a near 100% switching efficiency in Pt and Au 6H-SiC Schottky diode switches, and a 75% switching efficiency in p+n 6H-SiC diode switches. A breakdown field of more than 1×106 V/cm is obtained in p+n diode. Operation of SiC thyristor is demonstrated. A relatively long turn-on time of 170 ns is believed to be due to a long base region and a short carrier lifetime in 6H-SiC.

UR - https://www.scopus.com/pages/publications/0027904037

UR - https://www.scopus.com/pages/publications/0027904037#tab=citedBy

M3 - Paper

AN - SCOPUS:0027904037

SP - 821

EP - 824

T2 - Proceedings of the 1993 9th IEEE International Pulsed Power Conference. Part 2 (of 2)

Y2 - 21 June 1993 through 23 June 1993

ER -

Fabrication and characterization of 6H-SiC switching devices

Abstract

Conference

ASJC Scopus Subject Areas

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