Ferromagnetic and paramagnetic semiconductors based upon GaN, AlGaN, and GaP

Mark E. Overberg; Gerald T. Thaler; Rachel M. Frazier; Brent P. Gila; Cammy R. Abernathy; Stephen J. Pearton; Nikoleta A. Theodoropoulou; Stephen B. Arnason; Arthur F. Hebard; Yun D. Park

Ferromagnetic and paramagnetic semiconductors based upon GaN, AlGaN, and GaP

Mark E. Overberg
, Gerald T. Thaler
, Rachel M. Frazier
, Brent P. Gila
, Cammy R. Abernathy
, Stephen J. Pearton
, Nikoleta A. Theodoropoulou
, Stephen B. Arnason
, Arthur F. Hebard
, Yun D. Park

Physics

University of Florida

Research output: Contribution to journal › Conference article › peer-review

Abstract

Epitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700°C with 2.8% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures (> 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.

Original language	English
Pages (from-to)	9-14
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	690
State	Published - 2002
Event	Spintronics - Boston, MA, United States Duration: Nov 26 2001 → Nov 29 2001

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{d00727c2fcf04293a2b59c8fc895be1e,

title = "Ferromagnetic and paramagnetic semiconductors based upon GaN, AlGaN, and GaP",

abstract = "Epitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4\% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700°C with 2.8\% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures (> 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.",

author = "Overberg, \{Mark E.\} and Thaler, \{Gerald T.\} and Frazier, \{Rachel M.\} and Gila, \{Brent P.\} and Abernathy, \{Cammy R.\} and Pearton, \{Stephen J.\} and Theodoropoulou, \{Nikoleta A.\} and Arnason, \{Stephen B.\} and Hebard, \{Arthur F.\} and Park, \{Yun D.\}",

year = "2002",

language = "English",

volume = "690",

pages = "9--14",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Spintronics ; Conference date: 26-11-2001 Through 29-11-2001",

}

TY - JOUR

T1 - Ferromagnetic and paramagnetic semiconductors based upon GaN, AlGaN, and GaP

AU - Overberg, Mark E.

AU - Thaler, Gerald T.

AU - Frazier, Rachel M.

AU - Gila, Brent P.

AU - Abernathy, Cammy R.

AU - Pearton, Stephen J.

AU - Theodoropoulou, Nikoleta A.

AU - Arnason, Stephen B.

AU - Hebard, Arthur F.

AU - Park, Yun D.

PY - 2002

Y1 - 2002

N2 - Epitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700°C with 2.8% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures (> 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.

AB - Epitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700°C with 2.8% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures (> 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.

UR - https://www.scopus.com/pages/publications/0036351652

UR - https://www.scopus.com/pages/publications/0036351652#tab=citedBy

M3 - Conference article

AN - SCOPUS:0036351652

SN - 0272-9172

VL - 690

SP - 9

EP - 14

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Spintronics

Y2 - 26 November 2001 through 29 November 2001

ER -

Ferromagnetic and paramagnetic semiconductors based upon GaN, AlGaN, and GaP

Abstract

ASJC Scopus Subject Areas

Other files and links

Fingerprint

Cite this