GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

H. H. Tseng; H. Li; V. Mashanov; Y. J. Yang; H. H. Cheng; G. E. Chang; R. A. Soref; G. Sun

doi:10.1063/1.4840135

GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

H. H. Tseng
, H. Li
, V. Mashanov
, Y. J. Yang
, H. H. Cheng
, G. E. Chang
, R. A. Soref
, G. Sun

Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	231907
Journal	Applied Physics Letters
Volume	103
Issue number	23
DOIs	https://doi.org/10.1063/1.4840135
State	Published - Dec 2 2013

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4840135

Cite this

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title = "GeSn-based p-i-n photodiodes with strained active layer on a Si wafer",

author = "Tseng, \{H. H.\} and H. Li and V. Mashanov and Yang, \{Y. J.\} and Cheng, \{H. H.\} and Chang, \{G. E.\} and Soref, \{R. A.\} and G. Sun",

year = "2013",

month = dec,

day = "2",

doi = "10.1063/1.4840135",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

AU - Tseng, H. H.

AU - Li, H.

AU - Mashanov, V.

AU - Yang, Y. J.

AU - Cheng, H. H.

AU - Chang, G. E.

AU - Soref, R. A.

AU - Sun, G.

PY - 2013/12/2

Y1 - 2013/12/2

UR - https://www.scopus.com/pages/publications/84889789009

UR - https://www.scopus.com/pages/publications/84889789009#tab=citedBy

U2 - 10.1063/1.4840135

DO - 10.1063/1.4840135

M3 - Article

AN - SCOPUS:84889789009

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 231907

ER -

GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

ASJC Scopus Subject Areas

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