Growth and characterization of epitaxial Ge1-x Snx alloys and heterostructures using a commercial CVD system

Joe Margetis; Seyed Amir Ghetmiri; Wei Du; Benjamin R. Conley; Aboozar Mosleh; Richard A. Soref; Greg Sun; Lucas Domulevicz; Hameed A. Naseem; Shui Qing Yu; John Tolle

doi:10.1149/06406.0711ecst

Growth and characterization of epitaxial Ge_1-x Sn_x alloys and heterostructures using a commercial CVD system

Joe Margetis
, Seyed Amir Ghetmiri
, Wei Du
, Benjamin R. Conley
, Aboozar Mosleh
, Richard A. Soref
, Greg Sun
, Lucas Domulevicz
, Hameed A. Naseem
, Shui Qing Yu
, John Tolle

Engineering

ASM
University of Arkansas System
University of Massachusetts Boston
Wilkes University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Fully strained and relaxed epitaxial Ge_1-xSn_x alloys with Sn contents up to 12 at. % have been grown on Ge buffered Si using an Epsilon® 2000 Plus commercial chemical vapor deposition system. This has been accomplished using a specialized growth approach involving GeH₄ and SnCl₄ as well as B₂H₆ and PH₃ for nand p-type layers, respectively. Material and optical characterization of these alloys indicate that the alloys are of high crystal quality in which the Sn is fully substitutional. Heterostructures of doped Ge/Ge_1-xSn_x/Ge have also grown to demonstrate their application in light emitting and detecting devices. Phosphorus doped Ge_1-xSn_x photoluminescence has also been observed at wavelengths up to 2.4 μm. Growth, materials and optical properties of these materials will be discussed.

Original language	English
Pages (from-to)	711-720
Number of pages	10
Journal	ECS Transactions
Volume	64
Issue number	6
DOIs	https://doi.org/10.1149/06406.0711ecst
State	Published - 2014
Event	6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: Oct 5 2014 → Oct 9 2014

ASJC Scopus Subject Areas

General Engineering

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10.1149/06406.0711ecst

Cite this

@article{66c6ee7f1aea4d5c80fec4488010571f,

title = "Growth and characterization of epitaxial Ge1-x Snx alloys and heterostructures using a commercial CVD system",

abstract = "Fully strained and relaxed epitaxial Ge1-xSnx alloys with Sn contents up to 12 at. \% have been grown on Ge buffered Si using an Epsilon{\textregistered} 2000 Plus commercial chemical vapor deposition system. This has been accomplished using a specialized growth approach involving GeH4 and SnCl4 as well as B2H6 and PH3 for nand p-type layers, respectively. Material and optical characterization of these alloys indicate that the alloys are of high crystal quality in which the Sn is fully substitutional. Heterostructures of doped Ge/Ge1-xSnx/Ge have also grown to demonstrate their application in light emitting and detecting devices. Phosphorus doped Ge1-xSnx photoluminescence has also been observed at wavelengths up to 2.4 μm. Growth, materials and optical properties of these materials will be discussed.",

author = "Joe Margetis and Ghetmiri, \{Seyed Amir\} and Wei Du and Conley, \{Benjamin R.\} and Aboozar Mosleh and Soref, \{Richard A.\} and Greg Sun and Lucas Domulevicz and Naseem, \{Hameed A.\} and Yu, \{Shui Qing\} and John Tolle",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting ; Conference date: 05-10-2014 Through 09-10-2014",

year = "2014",

doi = "10.1149/06406.0711ecst",

language = "English",

volume = "64",

pages = "711--720",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Growth and characterization of epitaxial Ge1-x Snx alloys and heterostructures using a commercial CVD system

AU - Margetis, Joe

AU - Ghetmiri, Seyed Amir

AU - Du, Wei

AU - Conley, Benjamin R.

AU - Mosleh, Aboozar

AU - Soref, Richard A.

AU - Sun, Greg

AU - Domulevicz, Lucas

AU - Naseem, Hameed A.

AU - Yu, Shui Qing

AU - Tolle, John

PY - 2014

Y1 - 2014

N2 - Fully strained and relaxed epitaxial Ge1-xSnx alloys with Sn contents up to 12 at. % have been grown on Ge buffered Si using an Epsilon® 2000 Plus commercial chemical vapor deposition system. This has been accomplished using a specialized growth approach involving GeH4 and SnCl4 as well as B2H6 and PH3 for nand p-type layers, respectively. Material and optical characterization of these alloys indicate that the alloys are of high crystal quality in which the Sn is fully substitutional. Heterostructures of doped Ge/Ge1-xSnx/Ge have also grown to demonstrate their application in light emitting and detecting devices. Phosphorus doped Ge1-xSnx photoluminescence has also been observed at wavelengths up to 2.4 μm. Growth, materials and optical properties of these materials will be discussed.

AB - Fully strained and relaxed epitaxial Ge1-xSnx alloys with Sn contents up to 12 at. % have been grown on Ge buffered Si using an Epsilon® 2000 Plus commercial chemical vapor deposition system. This has been accomplished using a specialized growth approach involving GeH4 and SnCl4 as well as B2H6 and PH3 for nand p-type layers, respectively. Material and optical characterization of these alloys indicate that the alloys are of high crystal quality in which the Sn is fully substitutional. Heterostructures of doped Ge/Ge1-xSnx/Ge have also grown to demonstrate their application in light emitting and detecting devices. Phosphorus doped Ge1-xSnx photoluminescence has also been observed at wavelengths up to 2.4 μm. Growth, materials and optical properties of these materials will be discussed.

UR - https://www.scopus.com/pages/publications/84921285706

UR - https://www.scopus.com/pages/publications/84921285706#tab=citedBy

U2 - 10.1149/06406.0711ecst

DO - 10.1149/06406.0711ecst

M3 - Conference article

AN - SCOPUS:84921285706

SN - 1938-5862

VL - 64

SP - 711

EP - 720

JO - ECS Transactions

JF - ECS Transactions

IS - 6

T2 - 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting

Y2 - 5 October 2014 through 9 October 2014

ER -

Growth and characterization of epitaxial Ge_1-x Sn_x alloys and heterostructures using a commercial CVD system

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