Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy

M. E. Overberg; G. T. Thaler; C. R. Abernathy; N. A. Theodoropoulou; K. T. McCarthy; S. B. Arnason; J. S. Lee; J. D. Lim; S. B. Shim; K. S. Suh; Z. G. Khim; Y. D. Park; S. J. Pearton; A. F. Hebard

doi:10.1007/s11664-003-0148-5

Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy

M. E. Overberg
, G. T. Thaler
, C. R. Abernathy
, N. A. Theodoropoulou
, K. T. McCarthy
, S. B. Arnason
, J. S. Lee
, J. D. Lim
, S. B. Shim
, K. S. Suh
, Z. G. Khim
, Y. D. Park
, S. J. Pearton
, A. F. Hebard

Physics

University of Florida
Unknown
Seoul National University

Research output: Contribution to journal › Article › peer-review

Abstract

Growth by molecular-beam epitaxy (MBE) of the dilute-magnetic alloy GaMnN is reported. The Mn concentration, as determined by Auger electron spectroscopy (AES), is found to be linear with increasing Mn-cell temperature up to ∼43at.%Mn. No second phases are observed for Mn levels below 9 at.%. The cubic-phase Mn₄N is found to be the thermodynamically stable phase at the growth conditions used to produce GaMnN. Hysteresis in M versus H is observed in both GaMnN and GaMnN:C grown on both sapphire and metal-oxide chemical-vapor deposition (MOCVD) GaN at several growth temperatures. Magnetotransport results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis, indicating that Mn is incorporating into the GaN and forming the ferromagnetic-semiconductor GaMnN. Room-temperature hysteresis is obtained in magnetization measurements with an optimum Mn concentration of ∼3 at.%.

Original language	English
Pages (from-to)	298-306
Number of pages	9
Journal	Journal of Electronic Materials
Volume	32
Issue number	5
DOIs	https://doi.org/10.1007/s11664-003-0148-5
State	Published - May 2003

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Dilute magnetic semiconductor
Ferromagnetic
GaMnN
MBE
MOCVD
Molecular beam epitaxy

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10.1007/s11664-003-0148-5

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Overberg, M. E., Thaler, G. T., Abernathy, C. R., Theodoropoulou, N. A., McCarthy, K. T., Arnason, S. B., Lee, J. S., Lim, J. D., Shim, S. B., Suh, K. S., Khim, Z. G., Park, Y. D., Pearton, S. J., & Hebard, A. F. (2003). Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy. Journal of Electronic Materials, 32(5), 298-306. https://doi.org/10.1007/s11664-003-0148-5

@article{d1c27fd8c670433d809f3dd7ed0939e8,

title = "Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy",

abstract = "Growth by molecular-beam epitaxy (MBE) of the dilute-magnetic alloy GaMnN is reported. The Mn concentration, as determined by Auger electron spectroscopy (AES), is found to be linear with increasing Mn-cell temperature up to ∼43at.\%Mn. No second phases are observed for Mn levels below 9 at.\%. The cubic-phase Mn4N is found to be the thermodynamically stable phase at the growth conditions used to produce GaMnN. Hysteresis in M versus H is observed in both GaMnN and GaMnN:C grown on both sapphire and metal-oxide chemical-vapor deposition (MOCVD) GaN at several growth temperatures. Magnetotransport results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis, indicating that Mn is incorporating into the GaN and forming the ferromagnetic-semiconductor GaMnN. Room-temperature hysteresis is obtained in magnetization measurements with an optimum Mn concentration of ∼3 at.\%.",

keywords = "Dilute magnetic semiconductor, Ferromagnetic, GaMnN, MBE, MOCVD, Molecular beam epitaxy",

author = "Overberg, \{M. E.\} and Thaler, \{G. T.\} and Abernathy, \{C. R.\} and Theodoropoulou, \{N. A.\} and McCarthy, \{K. T.\} and Arnason, \{S. B.\} and Lee, \{J. S.\} and Lim, \{J. D.\} and Shim, \{S. B.\} and Suh, \{K. S.\} and Khim, \{Z. G.\} and Park, \{Y. D.\} and Pearton, \{S. J.\} and Hebard, \{A. F.\}",

year = "2003",

month = may,

doi = "10.1007/s11664-003-0148-5",

language = "English",

volume = "32",

pages = "298--306",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy

AU - Overberg, M. E.

AU - Thaler, G. T.

AU - Abernathy, C. R.

AU - Theodoropoulou, N. A.

AU - McCarthy, K. T.

AU - Arnason, S. B.

AU - Lee, J. S.

AU - Lim, J. D.

AU - Shim, S. B.

AU - Suh, K. S.

AU - Khim, Z. G.

AU - Park, Y. D.

AU - Pearton, S. J.

AU - Hebard, A. F.

PY - 2003/5

Y1 - 2003/5

N2 - Growth by molecular-beam epitaxy (MBE) of the dilute-magnetic alloy GaMnN is reported. The Mn concentration, as determined by Auger electron spectroscopy (AES), is found to be linear with increasing Mn-cell temperature up to ∼43at.%Mn. No second phases are observed for Mn levels below 9 at.%. The cubic-phase Mn4N is found to be the thermodynamically stable phase at the growth conditions used to produce GaMnN. Hysteresis in M versus H is observed in both GaMnN and GaMnN:C grown on both sapphire and metal-oxide chemical-vapor deposition (MOCVD) GaN at several growth temperatures. Magnetotransport results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis, indicating that Mn is incorporating into the GaN and forming the ferromagnetic-semiconductor GaMnN. Room-temperature hysteresis is obtained in magnetization measurements with an optimum Mn concentration of ∼3 at.%.

AB - Growth by molecular-beam epitaxy (MBE) of the dilute-magnetic alloy GaMnN is reported. The Mn concentration, as determined by Auger electron spectroscopy (AES), is found to be linear with increasing Mn-cell temperature up to ∼43at.%Mn. No second phases are observed for Mn levels below 9 at.%. The cubic-phase Mn4N is found to be the thermodynamically stable phase at the growth conditions used to produce GaMnN. Hysteresis in M versus H is observed in both GaMnN and GaMnN:C grown on both sapphire and metal-oxide chemical-vapor deposition (MOCVD) GaN at several growth temperatures. Magnetotransport results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis, indicating that Mn is incorporating into the GaN and forming the ferromagnetic-semiconductor GaMnN. Room-temperature hysteresis is obtained in magnetization measurements with an optimum Mn concentration of ∼3 at.%.

KW - Dilute magnetic semiconductor

KW - Ferromagnetic

KW - GaMnN

KW - MBE

KW - MOCVD

KW - Molecular beam epitaxy

UR - https://www.scopus.com/pages/publications/0037904846

UR - https://www.scopus.com/pages/publications/0037904846#tab=citedBy

U2 - 10.1007/s11664-003-0148-5

DO - 10.1007/s11664-003-0148-5

M3 - Article

AN - SCOPUS:0037904846

SN - 0361-5235

VL - 32

SP - 298

EP - 306

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy

Abstract

ASJC Scopus Subject Areas

Keywords

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