@article{d1c27fd8c670433d809f3dd7ed0939e8,
title = "Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy",
keywords = "Dilute magnetic semiconductor, Ferromagnetic, GaMnN, MBE, MOCVD, Molecular beam epitaxy",
author = "Overberg, \{M. E.\} and Thaler, \{G. T.\} and Abernathy, \{C. R.\} and Theodoropoulou, \{N. A.\} and McCarthy, \{K. T.\} and Arnason, \{S. B.\} and Lee, \{J. S.\} and Lim, \{J. D.\} and Shim, \{S. B.\} and Suh, \{K. S.\} and Khim, \{Z. G.\} and Park, \{Y. D.\} and Pearton, \{S. J.\} and Hebard, \{A. F.\}",
year = "2003",
month = may,
doi = "10.1007/s11664-003-0148-5",
language = "English",
volume = "32",
pages = "298--306",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "5",
}