Intersubband lasing in silicon-based multiple quantum wells

Gregory Sun; Jacob B. Khurgin; Lionel R. Friedman; Richard A. Soref

doi:10.1117/12.251876

Intersubband lasing in silicon-based multiple quantum wells

Gregory Sun
, Jacob B. Khurgin
, Lionel R. Friedman
, Richard A. Soref

Engineering

University of Massachusetts Boston

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Because of the absence of polar optical scattering, the lifetime difference of the upper and lower lasing levels, to which population inversion and laser gain are proportional, is an order of magnitude larger in silicon-based structures than in the III-Vs. Further enhancements are due to phonon confinement. For lasing wavelengths 10 μm and longer, Ge_xSi_1-x/Si is used. For operation at near infrared wavelengths, high barrier materials are needed. To avoid large operating voltages, designs are considered which rely on parallel rather than sequential operation.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Pages	198-204
Number of pages	7
Volume	2886
DOIs	https://doi.org/10.1117/12.251876
State	Published - 1996
Event	Semiconductor Lasers II - Beijing, China Duration: Nov 6 1996 → Nov 7 1996

Conference

Conference	Semiconductor Lasers II
City	Beijing, China
Period	11/6/96 → 11/7/96

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.251876

Cite this

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title = "Intersubband lasing in silicon-based multiple quantum wells",

abstract = "Because of the absence of polar optical scattering, the lifetime difference of the upper and lower lasing levels, to which population inversion and laser gain are proportional, is an order of magnitude larger in silicon-based structures than in the III-Vs. Further enhancements are due to phonon confinement. For lasing wavelengths 10 μm and longer, GexSi1-x/Si is used. For operation at near infrared wavelengths, high barrier materials are needed. To avoid large operating voltages, designs are considered which rely on parallel rather than sequential operation.",

author = "Gregory Sun and Khurgin, \{Jacob B.\} and Friedman, \{Lionel R.\} and Soref, \{Richard A.\}",

year = "1996",

doi = "10.1117/12.251876",

language = "English",

isbn = "0819422878",

volume = "2886",

pages = "198--204",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Semiconductor Lasers II ; Conference date: 06-11-1996 Through 07-11-1996",

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AU - Sun, Gregory

AU - Khurgin, Jacob B.

AU - Friedman, Lionel R.

AU - Soref, Richard A.

PY - 1996

Y1 - 1996

N2 - Because of the absence of polar optical scattering, the lifetime difference of the upper and lower lasing levels, to which population inversion and laser gain are proportional, is an order of magnitude larger in silicon-based structures than in the III-Vs. Further enhancements are due to phonon confinement. For lasing wavelengths 10 μm and longer, GexSi1-x/Si is used. For operation at near infrared wavelengths, high barrier materials are needed. To avoid large operating voltages, designs are considered which rely on parallel rather than sequential operation.

AB - Because of the absence of polar optical scattering, the lifetime difference of the upper and lower lasing levels, to which population inversion and laser gain are proportional, is an order of magnitude larger in silicon-based structures than in the III-Vs. Further enhancements are due to phonon confinement. For lasing wavelengths 10 μm and longer, GexSi1-x/Si is used. For operation at near infrared wavelengths, high barrier materials are needed. To avoid large operating voltages, designs are considered which rely on parallel rather than sequential operation.

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UR - https://www.scopus.com/pages/publications/0030393054#tab=citedBy

U2 - 10.1117/12.251876

DO - 10.1117/12.251876

M3 - Conference contribution

AN - SCOPUS:0030393054

SN - 0819422878

SN - 9780819422873

VL - 2886

SP - 198

EP - 204

BT - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Semiconductor Lasers II

Y2 - 6 November 1996 through 7 November 1996

ER -

Intersubband lasing in silicon-based multiple quantum wells

Abstract

Conference

ASJC Scopus Subject Areas

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