Intersubband lasing lifetimes of SiGe/Si and GaAs/AlGaAs multiple quantum well structures

G. Sun; L. Friedman; R. A. Soref

doi:10.1063/1.113375

Intersubband lasing lifetimes of SiGe/Si and GaAs/AlGaAs multiple quantum well structures

G. Sun
, L. Friedman
, R. A. Soref

Engineering

University of Massachusetts Boston

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3425-3427
Number of pages	3
Journal	Applied Physics Letters
Volume	66
Issue number	25
DOIs	https://doi.org/10.1063/1.113375
State	Published - Jan 1 1995

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Intersubband lasing lifetimes of SiGe/Si and GaAs/AlGaAs multiple quantum well structures",

author = "G. Sun and L. Friedman and Soref, \{R. A.\}",

year = "1995",

month = jan,

day = "1",

doi = "10.1063/1.113375",

language = "English",

volume = "66",

pages = "3425--3427",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

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T1 - Intersubband lasing lifetimes of SiGe/Si and GaAs/AlGaAs multiple quantum well structures

AU - Sun, G.

AU - Friedman, L.

AU - Soref, R. A.

PY - 1995/1/1

Y1 - 1995/1/1

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Intersubband lasing lifetimes of SiGe/Si and GaAs/AlGaAs multiple quantum well structures

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