Investigation of photoluminescence from Ge1-xSnx: A CMOS-compatible material grown on sivia CVD

Wei Du; Seyed Amir Ghetmiri; Aboozar Mosleh; Benjamin R. Conley; Liang Huang; Amjad Nazzal; Richard A. Soref; Greg Sun; John Tolle; Hameed A. Naseem; Shuiqing Yu

Investigation of photoluminescence from Ge1-xSnx: A CMOS-compatible material grown on sivia CVD

Wei Du
, Seyed Amir Ghetmiri
, Aboozar Mosleh
, Benjamin R. Conley
, Liang Huang
, Amjad Nazzal
, Richard A. Soref
, Greg Sun
, John Tolle
, Hameed A. Naseem
, Shuiqing Yu

Engineering

University of Arkansas System
Wilkes University
University of Massachusetts Boston
ASM

Research output: Contribution to conference › Paper › peer-review

Abstract

Photoluminescence (PL) from Ge1-xSnx grown on Si by CVD was investigated for Sn composition of 0.9, 3.2, 6, and 7%, respectively. The direct and indirect band transitions were analyzed at different temperatures.

Original language	English
State	Published - 2014
Event	2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States Duration: Jun 8 2014 → Jun 13 2014

Conference

Conference	2014 Conference on Lasers and Electro-Optics, CLEO 2014
Country/Territory	United States
City	San Jose
Period	6/8/14 → 6/13/14

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Cite this

@conference{70bbff3f6dbe481094a14edab996e2f0,

title = "Investigation of photoluminescence from Ge1-xSnx: A CMOS-compatible material grown on sivia CVD",

abstract = "Photoluminescence (PL) from Ge1-xSnx grown on Si by CVD was investigated for Sn composition of 0.9, 3.2, 6, and 7\%, respectively. The direct and indirect band transitions were analyzed at different temperatures.",

author = "Wei Du and Ghetmiri, \{Seyed Amir\} and Aboozar Mosleh and Conley, \{Benjamin R.\} and Liang Huang and Amjad Nazzal and Soref, \{Richard A.\} and Greg Sun and John Tolle and Naseem, \{Hameed A.\} and Shuiqing Yu",

note = "Publisher Copyright: {\textcopyright} 2014 Optical Society of America.; 2014 Conference on Lasers and Electro-Optics, CLEO 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

language = "English",

}

TY - CONF

T1 - Investigation of photoluminescence from Ge1-xSnx

T2 - 2014 Conference on Lasers and Electro-Optics, CLEO 2014

AU - Du, Wei

AU - Ghetmiri, Seyed Amir

AU - Mosleh, Aboozar

AU - Conley, Benjamin R.

AU - Huang, Liang

AU - Nazzal, Amjad

AU - Soref, Richard A.

AU - Sun, Greg

AU - Tolle, John

AU - Naseem, Hameed A.

AU - Yu, Shuiqing

PY - 2014

Y1 - 2014

N2 - Photoluminescence (PL) from Ge1-xSnx grown on Si by CVD was investigated for Sn composition of 0.9, 3.2, 6, and 7%, respectively. The direct and indirect band transitions were analyzed at different temperatures.

AB - Photoluminescence (PL) from Ge1-xSnx grown on Si by CVD was investigated for Sn composition of 0.9, 3.2, 6, and 7%, respectively. The direct and indirect band transitions were analyzed at different temperatures.

UR - https://www.scopus.com/pages/publications/84944704525

UR - https://www.scopus.com/pages/publications/84944704525#tab=citedBy

M3 - Paper

AN - SCOPUS:84944704525

Y2 - 8 June 2014 through 13 June 2014

ER -

Investigation of photoluminescence from Ge1-xSnx: A CMOS-compatible material grown on sivia CVD

Abstract

Conference

ASJC Scopus Subject Areas

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