Investigation of Photoluminescence from Ge1-xSnx: A CMOS-Compatible Material Grown on Si via CVD

Wei Du; Seyed Amir Ghetmiri; Aboozar Mosleh; Benjamin R. Conley R.; Liang Huang; Amjad Nazza; S. Soref Richard; Greg Sun; John Tolle; A. Naseem Hameed; Shuiqing Yu

Investigation of Photoluminescence from Ge_1-xSn_x: A CMOS-Compatible Material Grown on Si via CVD

Wei Du
, Seyed Amir Ghetmiri
, Aboozar Mosleh
, Benjamin R. Conley R.
, Liang Huang
, Amjad Nazza
, S. Soref Richard
, Greg Sun
, John Tolle
, A. Naseem Hameed
, Shuiqing Yu

Engineering

University of Arkansas System
Wilkes University
ASM

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Photoluminescence (PL) from Ge1-xSnx grown on Si by CVD was investigated for Sncomposition of 0.9, 3.2, 6, and 7%, respectively. The direct and indirect band transitions wereanalyzed at different temperatures.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	QELS_Fundamental Science, CLEO_QELS 2014
Publisher	Optical Society of American (OSA)
ISBN (Print)	9781557529992
State	Published - 2014
Event	CLEO: QELS_Fundamental Science, CLEO_QELS 2014 - San Jose, CA, United States Duration: Jun 8 2014 → Jun 13 2014

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: QELS_Fundamental Science, CLEO_QELS 2014
Country/Territory	United States
City	San Jose, CA
Period	6/8/14 → 6/13/14

ASJC Scopus Subject Areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

Du, W, Ghetmiri, SA, Mosleh, A, Conley R., BR, Huang, L, Nazza, A, Richard, SS, Sun, G, Tolle, J, Hameed, AN & Yu, S 2014, Investigation of Photoluminescence from Ge_1-xSn_x: A CMOS-Compatible Material Grown on Si via CVD. in CLEO: QELS_Fundamental Science, CLEO_QELS 2014. Optics InfoBase Conference Papers, Optical Society of American (OSA), CLEO: QELS_Fundamental Science, CLEO_QELS 2014, San Jose, CA, United States, 6/8/14.

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title = "Investigation of Photoluminescence from Ge1-xSnx: A CMOS-Compatible Material Grown on Si via CVD",

abstract = "Photoluminescence (PL) from Ge1-xSnx grown on Si by CVD was investigated for Sncomposition of 0.9, 3.2, 6, and 7\%, respectively. The direct and indirect band transitions wereanalyzed at different temperatures.",

author = "Wei Du and Ghetmiri, \{Seyed Amir\} and Aboozar Mosleh and \{Conley R.\}, \{Benjamin R.\} and Liang Huang and Amjad Nazza and Richard, \{S. Soref\} and Greg Sun and John Tolle and Hameed, \{A. Naseem\} and Shuiqing Yu",

year = "2014",

language = "English",

isbn = "9781557529992",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of American (OSA)",

booktitle = "CLEO",

note = "CLEO: QELS\_Fundamental Science, CLEO\_QELS 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

}

TY - GEN

T1 - Investigation of Photoluminescence from Ge1-xSnx

T2 - CLEO: QELS_Fundamental Science, CLEO_QELS 2014

AU - Du, Wei

AU - Ghetmiri, Seyed Amir

AU - Mosleh, Aboozar

AU - Conley R., Benjamin R.

AU - Huang, Liang

AU - Nazza, Amjad

AU - Richard, S. Soref

AU - Sun, Greg

AU - Tolle, John

AU - Hameed, A. Naseem

AU - Yu, Shuiqing

PY - 2014

Y1 - 2014

N2 - Photoluminescence (PL) from Ge1-xSnx grown on Si by CVD was investigated for Sncomposition of 0.9, 3.2, 6, and 7%, respectively. The direct and indirect band transitions wereanalyzed at different temperatures.

AB - Photoluminescence (PL) from Ge1-xSnx grown on Si by CVD was investigated for Sncomposition of 0.9, 3.2, 6, and 7%, respectively. The direct and indirect band transitions wereanalyzed at different temperatures.

UR - https://www.scopus.com/pages/publications/84905501554

UR - https://www.scopus.com/pages/publications/84905501554#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:84905501554

SN - 9781557529992

T3 - Optics InfoBase Conference Papers

BT - CLEO

PB - Optical Society of American (OSA)

Y2 - 8 June 2014 through 13 June 2014

ER -