Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

Justin W. Cleary; Robert E. Peale; Himanshu Saxena; Walter R. Buchwald

doi:10.1117/12.883480

Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

Justin W. Cleary
, Robert E. Peale
, Himanshu Saxena
, Walter R. Buchwald

Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Terahertz Physics, Devices, and Systems V
Subtitle of host publication	Advance Applications in Industry and Defense
DOIs	https://doi.org/10.1117/12.883480
State	Published - 2011
Event	Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense - Orlando, FL, United States Duration: Apr 25 2011 → Apr 26 2011

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8023
ISSN (Print)	0277-786X

Conference

Conference	Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
Country/Territory	United States
City	Orlando, FL
Period	4/25/11 → 4/26/11

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

2DEG
Detection
HEMT
Infrared
Plasmonics
Terahertz

Access to Document

10.1117/12.883480

Cite this

Cleary, J. W., Peale, R. E., Saxena, H., & Buchwald, W. R. (2011). Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor. In Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense Article 80230X (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8023). https://doi.org/10.1117/12.883480

Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor. / Cleary, Justin W.; Peale, Robert E.; Saxena, Himanshu et al.
Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense. 2011. 80230X (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cleary, JW, Peale, RE, Saxena, H & Buchwald, WR 2011, Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor. in Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense., 80230X, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, Orlando, FL, United States, 4/25/11. https://doi.org/10.1117/12.883480

Cleary JW, Peale RE, Saxena H, Buchwald WR. Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor. In Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense. 2011. 80230X. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.883480

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title = "Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor",

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AU - Cleary, Justin W.

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AU - Buchwald, Walter R.

PY - 2011

Y1 - 2011

KW - 2DEG

KW - Detection

KW - HEMT

KW - Infrared

KW - Plasmonics

KW - Terahertz

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Terahertz Physics, Devices, and Systems V

T2 - Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense

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ER -

Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

Publication series

Conference

ASJC Scopus Subject Areas

Keywords

Access to Document

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