Investigation of Si-based Ge0.89Sn0.11 photoconductors with 3.0 m photoresponse

Thach Pham; Huong Tran; Wei Du; Joe Margetis; Yiyin Zhou; Perry C. Grant; Greg Sun; Richard A. Soref; John Tolle; Baohua Li; Mansour Mortazavi; Shui Qing Yu

doi:10.1364/CLEO_SI.2017.STu1N.6

Investigation of Si-based Ge0.89Sn0.11 photoconductors with 3.0 m photoresponse

Thach Pham
, Huong Tran
, Wei Du
, Joe Margetis
, Yiyin Zhou
, Perry C. Grant
, Greg Sun
, Richard A. Soref
, John Tolle
, Baohua Li
, Mansour Mortazavi
, Shui Qing Yu

Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
Subtitle of host publication	Science and Innovations, CLEO_SI 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781943580279
ISBN (Print)	9781943580279
DOIs	https://doi.org/10.1364/CLEO_SI.2017.STu1N.6
State	Published - Oct 25 2017
Event	2017 Conference on Lasers and Electro-Optics, CLEO 2017 - San Jose, United States Duration: May 14 2017 → May 19 2017

Publication series

Name	2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
Volume	2017-January

Conference

Conference	2017 Conference on Lasers and Electro-Optics, CLEO 2017
Country/Territory	United States
City	San Jose
Period	5/14/17 → 5/19/17

ASJC Scopus Subject Areas

Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Instrumentation
Mechanics of Materials

Access to Document

10.1364/CLEO_SI.2017.STu1N.6

Cite this

Pham, T., Tran, H., Du, W., Margetis, J., Zhou, Y., Grant, P. C., Sun, G., Soref, R. A., Tolle, J., Li, B., Mortazavi, M., & Yu, S. Q. (2017). Investigation of Si-based Ge0.89Sn0.11 photoconductors with 3.0 m photoresponse. In 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings: Science and Innovations, CLEO_SI 2017 (pp. 1-2). (2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/CLEO_SI.2017.STu1N.6

Investigation of Si-based Ge0.89Sn0.11 photoconductors with 3.0 m photoresponse. / Pham, Thach; Tran, Huong; Du, Wei et al.
2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings: Science and Innovations, CLEO_SI 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-2 (2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Pham, T, Tran, H, Du, W, Margetis, J, Zhou, Y, Grant, PC, Sun, G, Soref, RA, Tolle, J, Li, B, Mortazavi, M & Yu, SQ 2017, Investigation of Si-based Ge0.89Sn0.11 photoconductors with 3.0 m photoresponse. in 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings: Science and Innovations, CLEO_SI 2017. 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 2017 Conference on Lasers and Electro-Optics, CLEO 2017, San Jose, United States, 5/14/17. https://doi.org/10.1364/CLEO_SI.2017.STu1N.6

Pham T, Tran H, Du W, Margetis J, Zhou Y, Grant PC et al. Investigation of Si-based Ge0.89Sn0.11 photoconductors with 3.0 m photoresponse. In 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings: Science and Innovations, CLEO_SI 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-2. (2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings). doi: 10.1364/CLEO_SI.2017.STu1N.6

Pham, Thach ; Tran, Huong ; Du, Wei et al. / Investigation of Si-based Ge0.89Sn0.11 photoconductors with 3.0 m photoresponse. 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings: Science and Innovations, CLEO_SI 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-2 (2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings).

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Investigation of Si-based Ge0.89Sn0.11 photoconductors with 3.0 m photoresponse

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