Low damage and residue-free dry etching of 6H-SiC using electron cyclotron resonance plasma

K. Xie; J. R. Flemish; J. H. Zhao; W. R. Buchwald; L. Casas

doi:10.1063/1.114631

Low damage and residue-free dry etching of 6H-SiC using electron cyclotron resonance plasma

K. Xie
, J. R. Flemish
, J. H. Zhao
, W. R. Buchwald
, L. Casas

Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	368
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114631
State	Published - 1995

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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@article{3582c6e9a9e848f5835c9d78ee389181,

title = "Low damage and residue-free dry etching of 6H-SiC using electron cyclotron resonance plasma",

author = "K. Xie and Flemish, \{J. R.\} and Zhao, \{J. H.\} and Buchwald, \{W. R.\} and L. Casas",

year = "1995",

doi = "10.1063/1.114631",

language = "English",

volume = "67",

pages = "368",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Low damage and residue-free dry etching of 6H-SiC using electron cyclotron resonance plasma

AU - Xie, K.

AU - Flemish, J. R.

AU - Zhao, J. H.

AU - Buchwald, W. R.

AU - Casas, L.

PY - 1995

Y1 - 1995

UR - https://www.scopus.com/pages/publications/21544464120

UR - https://www.scopus.com/pages/publications/21544464120#tab=citedBy

U2 - 10.1063/1.114631

DO - 10.1063/1.114631

M3 - Article

AN - SCOPUS:21544464120

SN - 0003-6951

VL - 67

SP - 368

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Low damage and residue-free dry etching of 6H-SiC using electron cyclotron resonance plasma

ASJC Scopus Subject Areas

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