Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy

Mark E. Overberg; Brent P. Gila; Cammy R. Abernathy; Stephen J. Pearton; Nikoleta A. Theodoropoulou; Kevin T. McCarthy; Stephen B. Arnason; Arthur F. Hebard

doi:10.1063/1.1416472

Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy

Mark E. Overberg
, Brent P. Gila
, Cammy R. Abernathy
, Stephen J. Pearton
, Nikoleta A. Theodoropoulou
, Kevin T. McCarthy
, Stephen B. Arnason
, Arthur F. Hebard

Physics

University of Florida
University of Florida

Research output: Contribution to journal › Article › peer-review

Abstract

Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnP:C is reported. The GaMnP:C contains 9.4% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction, reflection high-energy electron diffraction, and transmission electron microscopy. Both magnetization and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaP:C and forming the ferromagnetic semiconductor GaMnP:C. Temperature-dependent magnetization and anomalous Hall data show that magnetic behavior persists to at least 200 K, which is a very high value for a III-V based dilute magnetic semiconductor.

Original language	English
Pages (from-to)	3128-3130
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	19
DOIs	https://doi.org/10.1063/1.1416472
State	Published - Nov 5 2001

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1416472

Cite this

@article{b7c3cc85877541f5b4f7c2b0a6d0aa21,

title = "Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy",

abstract = "Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnP:C is reported. The GaMnP:C contains 9.4\% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction, reflection high-energy electron diffraction, and transmission electron microscopy. Both magnetization and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaP:C and forming the ferromagnetic semiconductor GaMnP:C. Temperature-dependent magnetization and anomalous Hall data show that magnetic behavior persists to at least 200 K, which is a very high value for a III-V based dilute magnetic semiconductor.",

author = "Overberg, \{Mark E.\} and Gila, \{Brent P.\} and Abernathy, \{Cammy R.\} and Pearton, \{Stephen J.\} and Theodoropoulou, \{Nikoleta A.\} and McCarthy, \{Kevin T.\} and Arnason, \{Stephen B.\} and Hebard, \{Arthur F.\}",

year = "2001",

month = nov,

day = "5",

doi = "10.1063/1.1416472",

language = "English",

volume = "79",

pages = "3128--3130",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy

AU - Overberg, Mark E.

AU - Gila, Brent P.

AU - Abernathy, Cammy R.

AU - Pearton, Stephen J.

AU - Theodoropoulou, Nikoleta A.

AU - McCarthy, Kevin T.

AU - Arnason, Stephen B.

AU - Hebard, Arthur F.

PY - 2001/11/5

Y1 - 2001/11/5

N2 - Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnP:C is reported. The GaMnP:C contains 9.4% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction, reflection high-energy electron diffraction, and transmission electron microscopy. Both magnetization and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaP:C and forming the ferromagnetic semiconductor GaMnP:C. Temperature-dependent magnetization and anomalous Hall data show that magnetic behavior persists to at least 200 K, which is a very high value for a III-V based dilute magnetic semiconductor.

AB - Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnP:C is reported. The GaMnP:C contains 9.4% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction, reflection high-energy electron diffraction, and transmission electron microscopy. Both magnetization and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaP:C and forming the ferromagnetic semiconductor GaMnP:C. Temperature-dependent magnetization and anomalous Hall data show that magnetic behavior persists to at least 200 K, which is a very high value for a III-V based dilute magnetic semiconductor.

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U2 - 10.1063/1.1416472

DO - 10.1063/1.1416472

M3 - Article

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SN - 0003-6951

VL - 79

SP - 3128

EP - 3130

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy

Abstract

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