Magnetron enhanced reactive ion etching of GaAs in CH4/H2/Ar: Surface damage study/H2/Ar: Surface damage study

G. F. McLane; W. R. Buchwald; L. Casas; M. W. Cole

doi:10.1116/1.579321

Magnetron enhanced reactive ion etching of GaAs in CH₄/H₂/Ar: Surface damage study/H₂/Ar: Surface damage study

G. F. McLane
, W. R. Buchwald
, L. Casas
, M. W. Cole

Engineering

U. S. Army Electronics Technology and Devices Laboratory

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1356-1359
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	12
Issue number	4
DOIs	https://doi.org/10.1116/1.579321
State	Published - Jul 1994

ASJC Scopus Subject Areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.579321

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title = "Magnetron enhanced reactive ion etching of GaAs in CH4/H2/Ar: Surface damage study/H2/Ar: Surface damage study",

author = "McLane, \{G. F.\} and Buchwald, \{W. R.\} and L. Casas and Cole, \{M. W.\}",

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AU - McLane, G. F.

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AU - Casas, L.

AU - Cole, M. W.

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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Magnetron enhanced reactive ion etching of GaAs in CH₄/H₂/Ar: Surface damage study/H₂/Ar: Surface damage study

ASJC Scopus Subject Areas

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