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Mid-infrared electroluminescence from a Ge/Ge0.922Sn 0.078/Ge double heterostructure p-i-n diode on a Si substrate

  • H. H. Tseng
  • , K. Y. Wu
  • , H. Li
  • , V. Mashanov
  • , H. H. Cheng
  • , G. Sun
  • , R. A. Soref
  • National Taiwan University
  • University of Massachusetts Boston

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number182106
JournalApplied Physics Letters
Volume102
Issue number18
DOIs
StatePublished - May 6 2013

ASJC Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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