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Mid-IR integrated nanophotonics for chip-scale quantum optics applications

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An integrated nanophotonics architecture based on inter-sub-band transitions, surface depletion and plasmon mediated near field effects is reported. The combined use of these methodologies allows for the monolithic integration of passive waveguides, quantum cascade laser light sources and on-chip single photon detectors along with the precise placement of a quantum dot formed from a quantum well system for use as a single photon emitter. Such dots, when coupled to a suitable cavity, form the basis of the next generation quantum information, quantum metrology and quantum communication systems, while the overall architecture provides for a completely chip-based quantum optic functionality.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Pages17-20
Number of pages4
StatePublished - 2013
EventNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States
Duration: May 12 2013 → May 16 2013

Publication series

NameTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volume2

Conference

ConferenceNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Country/TerritoryUnited States
CityWashington, DC
Period5/12/13 → 5/16/13

ASJC Scopus Subject Areas

  • Biotechnology

Keywords

  • Integrated photonics
  • Inter-sub-band transitions
  • Nanophotonics
  • Quantum dots
  • Quantum wells

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