Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors

N. Nader Esfahani; R. E. Peale; W. R. Buchwald; C. J. Fredricksen; J. R. Hendrickson; J. W. Cleary

doi:10.1063/1.4813511

Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors

N. Nader Esfahani
, R. E. Peale
, W. R. Buchwald
, C. J. Fredricksen
, J. R. Hendrickson
, J. W. Cleary

Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	033105
Journal	Journal of Applied Physics
Volume	114
Issue number	3
DOIs	https://doi.org/10.1063/1.4813511
State	Published - Jul 21 2013

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.4813511

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title = "Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors",

author = "\{Nader Esfahani\}, N. and Peale, \{R. E.\} and Buchwald, \{W. R.\} and Fredricksen, \{C. J.\} and Hendrickson, \{J. R.\} and Cleary, \{J. W.\}",

year = "2013",

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doi = "10.1063/1.4813511",

language = "English",

volume = "114",

journal = "Journal of Applied Physics",

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AU - Nader Esfahani, N.

AU - Peale, R. E.

AU - Buchwald, W. R.

AU - Fredricksen, C. J.

AU - Hendrickson, J. R.

AU - Cleary, J. W.

PY - 2013/7/21

Y1 - 2013/7/21

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DO - 10.1063/1.4813511

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JF - Journal of Applied Physics

IS - 3

M1 - 033105

ER -

Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors

ASJC Scopus Subject Areas

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