Nonlinear all-optical GaN/AlGaN multi-quantum-well devices for 100 Gb/s applications at λ=1.55 μm

Greg Sun; Jacob B. Khurgin; Richard A. Soref

doi:10.1063/1.2132084

Nonlinear all-optical GaN/AlGaN multi-quantum-well devices for 100 Gb/s applications at λ=1.55 μm

Greg Sun
, Jacob B. Khurgin
, Richard A. Soref

Engineering

Johns Hopkins University
Air Force Research Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

Using quantum-mechanical analysis, a strain-balanced stack of coupled GaNAlGaN quantum wells has been engineered for bandwidth-optimized all-optical switching at low switching powers. Intersubband transitions between three conduction subbands provide the basis for the large, fast, nonlinear optical response. Optimized performance for a given symbol rate is obtained by engineering the response time and nonlinear phase shift.

Original language	English
Article number	201108
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	20
DOIs	https://doi.org/10.1063/1.2132084
State	Published - Nov 14 2005

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2132084

Cite this

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title = "Nonlinear all-optical GaN/AlGaN multi-quantum-well devices for 100 Gb/s applications at λ=1.55 μm",

abstract = "Using quantum-mechanical analysis, a strain-balanced stack of coupled GaNAlGaN quantum wells has been engineered for bandwidth-optimized all-optical switching at low switching powers. Intersubband transitions between three conduction subbands provide the basis for the large, fast, nonlinear optical response. Optimized performance for a given symbol rate is obtained by engineering the response time and nonlinear phase shift.",

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N2 - Using quantum-mechanical analysis, a strain-balanced stack of coupled GaNAlGaN quantum wells has been engineered for bandwidth-optimized all-optical switching at low switching powers. Intersubband transitions between three conduction subbands provide the basis for the large, fast, nonlinear optical response. Optimized performance for a given symbol rate is obtained by engineering the response time and nonlinear phase shift.

AB - Using quantum-mechanical analysis, a strain-balanced stack of coupled GaNAlGaN quantum wells has been engineered for bandwidth-optimized all-optical switching at low switching powers. Intersubband transitions between three conduction subbands provide the basis for the large, fast, nonlinear optical response. Optimized performance for a given symbol rate is obtained by engineering the response time and nonlinear phase shift.

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Nonlinear all-optical GaN/AlGaN multi-quantum-well devices for 100 Gb/s applications at λ=1.55 μm

Abstract

ASJC Scopus Subject Areas

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