Observation of in-plane strain fluctuation in relaxed SiGe virtual substrate

Wu Ping Huang; Henry H. Cheng; Gregory Sun; Rui Fa Lou; J. H. Yeh; Tzer Min Shen

doi:10.1016/j.tsf.2008.08.075

Observation of in-plane strain fluctuation in relaxed SiGe virtual substrate

Wu Ping Huang
, Henry H. Cheng
, Gregory Sun
, Rui Fa Lou
, J. H. Yeh
, Tzer Min Shen

Engineering

National Taiwan University
United Microelectronics Corporation

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate the morphology and strain distribution of the surface crosshatch undulation on a strain-relaxed SiGe layer grown on a low-temperature Si buffer layer by atomic force microscopy and spatially-resolved UV-Raman spectroscopy. Surface crosshatch undulation resulted from misfit dislocations at the SiGe/Si interface is associated with the strain relaxation in the SiGe layer. By means of thermal annealing, strain relaxes and the inhomogeneous in-plane strain fluctuation can be eliminated.

Original language	English
Pages (from-to)	281-284
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.075
State	Published - Nov 3 2008

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

Atomic force microscopy
Strain relaxation
UV-Raman
Virtual substrate

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10.1016/j.tsf.2008.08.075

Cite this

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title = "Observation of in-plane strain fluctuation in relaxed SiGe virtual substrate",

abstract = "We investigate the morphology and strain distribution of the surface crosshatch undulation on a strain-relaxed SiGe layer grown on a low-temperature Si buffer layer by atomic force microscopy and spatially-resolved UV-Raman spectroscopy. Surface crosshatch undulation resulted from misfit dislocations at the SiGe/Si interface is associated with the strain relaxation in the SiGe layer. By means of thermal annealing, strain relaxes and the inhomogeneous in-plane strain fluctuation can be eliminated.",

keywords = "Atomic force microscopy, Strain relaxation, UV-Raman, Virtual substrate",

author = "Huang, \{Wu Ping\} and Cheng, \{Henry H.\} and Gregory Sun and Lou, \{Rui Fa\} and Yeh, \{J. H.\} and Shen, \{Tzer Min\}",

year = "2008",

month = nov,

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doi = "10.1016/j.tsf.2008.08.075",

language = "English",

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pages = "281--284",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Observation of in-plane strain fluctuation in relaxed SiGe virtual substrate

AU - Huang, Wu Ping

AU - Cheng, Henry H.

AU - Sun, Gregory

AU - Lou, Rui Fa

AU - Yeh, J. H.

AU - Shen, Tzer Min

PY - 2008/11/3

Y1 - 2008/11/3

N2 - We investigate the morphology and strain distribution of the surface crosshatch undulation on a strain-relaxed SiGe layer grown on a low-temperature Si buffer layer by atomic force microscopy and spatially-resolved UV-Raman spectroscopy. Surface crosshatch undulation resulted from misfit dislocations at the SiGe/Si interface is associated with the strain relaxation in the SiGe layer. By means of thermal annealing, strain relaxes and the inhomogeneous in-plane strain fluctuation can be eliminated.

AB - We investigate the morphology and strain distribution of the surface crosshatch undulation on a strain-relaxed SiGe layer grown on a low-temperature Si buffer layer by atomic force microscopy and spatially-resolved UV-Raman spectroscopy. Surface crosshatch undulation resulted from misfit dislocations at the SiGe/Si interface is associated with the strain relaxation in the SiGe layer. By means of thermal annealing, strain relaxes and the inhomogeneous in-plane strain fluctuation can be eliminated.

KW - Atomic force microscopy

KW - Strain relaxation

KW - UV-Raman

KW - Virtual substrate

UR - https://www.scopus.com/pages/publications/54949106154

UR - https://www.scopus.com/pages/publications/54949106154#tab=citedBy

U2 - 10.1016/j.tsf.2008.08.075

DO - 10.1016/j.tsf.2008.08.075

M3 - Article

AN - SCOPUS:54949106154

SN - 0040-6090

VL - 517

SP - 281

EP - 284

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Observation of in-plane strain fluctuation in relaxed SiGe virtual substrate

Abstract

ASJC Scopus Subject Areas

Keywords

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