Observation of type-I and type-II excitons in strained SiSiGe quantum-well structures

K. Y. Wang; W. P. Huang; H. H. Cheng; G. Sun; R. A. Soref; R. J. Nicholas; Y. W. Suen

doi:10.1063/1.2771094

Observation of type-I and type-II excitons in strained SiSiGe quantum-well structures

K. Y. Wang
, W. P. Huang
, H. H. Cheng
, G. Sun
, R. A. Soref
, R. J. Nicholas
, Y. W. Suen

Engineering

National Taiwan University
Air Force Research Laboratory
University of Oxford
National Chung Hsing University
National Nano Device Laboratories Taiwan

Research output: Contribution to journal › Article › peer-review

Abstract

The authors report photoluminescence (PL) measurement on a series of SiSiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment-desired for electroluminescent devices-can be achieved by strain engineering.

Original language	English
Article number	072108
Journal	Applied Physics Letters
Volume	91
Issue number	7
DOIs	https://doi.org/10.1063/1.2771094
State	Published - 2007

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2771094

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abstract = "The authors report photoluminescence (PL) measurement on a series of SiSiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment-desired for electroluminescent devices-can be achieved by strain engineering.",

author = "Wang, \{K. Y.\} and Huang, \{W. P.\} and Cheng, \{H. H.\} and G. Sun and Soref, \{R. A.\} and Nicholas, \{R. J.\} and Suen, \{Y. W.\}",

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doi = "10.1063/1.2771094",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

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AU - Wang, K. Y.

AU - Huang, W. P.

AU - Cheng, H. H.

AU - Sun, G.

AU - Soref, R. A.

AU - Nicholas, R. J.

AU - Suen, Y. W.

PY - 2007

Y1 - 2007

N2 - The authors report photoluminescence (PL) measurement on a series of SiSiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment-desired for electroluminescent devices-can be achieved by strain engineering.

AB - The authors report photoluminescence (PL) measurement on a series of SiSiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment-desired for electroluminescent devices-can be achieved by strain engineering.

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UR - https://www.scopus.com/pages/publications/34548039505#tab=citedBy

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072108

ER -

Observation of type-I and type-II excitons in strained SiSiGe quantum-well structures

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ASJC Scopus Subject Areas

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