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Optical Characterization of Si-Based Ge1−xSn x Alloys with Sn Compositions up to 12%

  • Sattar Al-Kabi
  • , Seyed Amir Ghetmiri
  • , Joe Margetis
  • , Wei Du
  • , Aboozar Mosleh
  • , Murtadha Alher
  • , Wei Dou
  • , Joshua M. Grant
  • , Greg Sun
  • , Richard A. Soref
  • , John Tolle
  • , Baohua Li
  • , Mansour Mortazavi
  • , Hameed A. Naseem
  • , Shui Qing Yu
  • University of Arkansas
  • University of Arkansas System
  • Wasit University
  • ASM
  • University of Kerbala
  • University of Massachusetts Boston
  • Arktonics, LLC
  • University of Arkansas at Pine Bluff

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)2133-2141
Number of pages9
JournalJournal of Electronic Materials
Volume45
Issue number4
DOIs
StatePublished - Apr 1 2016

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • GeSn alloy
  • n- doped GeSn
  • photoluminescence
  • Raman spectroscopy

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