Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT

Nima Nader Esfahani; Christopher J. Fredricksen; Guatam Medhi; R. E. Peale; Justin W. Cleary; Walter R. Buchwald; Himanshu Saxena; Oliver J. Edwards

doi:10.1117/12.884005

Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT

Nima Nader Esfahani
, Christopher J. Fredricksen
, Guatam Medhi
, R. E. Peale
, Justin W. Cleary
, Walter R. Buchwald
, Himanshu Saxena
, Oliver J. Edwards

Engineering

University of Central Florida
Air Force Research Laboratory
Zyberwear Incorporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Tunable resonant absorption by plasmons in the two-dimensional electron gas (2DEG) of grating-gated HEMTs is known for a variety of semiconductor systems, giving promise of chip-scale frequency- agile THz imaging spectrometers. In this work, we present our approach to measurement of electrical response to millimeter waves from backward-wave oscillators (BWO) in the range 40-110 GHz for InP-based HEMTs. Frequency-modulation of the BWO with lock-in amplification of the source-drain current gives an output proportional to the change in absorption with frequency without contribution from non-resonant response. This is a first step in optimizing such devices for manportable or space-based spectral-sensing applications.

Original language	English
Title of host publication	Terahertz Physics, Devices, and Systems V
Subtitle of host publication	Advance Applications in Industry and Defense
DOIs	https://doi.org/10.1117/12.884005
State	Published - 2011
Event	Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense - Orlando, FL, United States Duration: Apr 25 2011 → Apr 26 2011

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8023
ISSN (Print)	0277-786X

Conference

Conference	Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
Country/Territory	United States
City	Orlando, FL
Period	4/25/11 → 4/26/11

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

HEMT
Millimeter wave
Plasmon
Terahertz

Access to Document

10.1117/12.884005

Cite this

Esfahani, N. N., Fredricksen, C. J., Medhi, G., Peale, R. E., Cleary, J. W., Buchwald, W. R., Saxena, H., & Edwards, O. J. (2011). Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT. In Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense Article 80230R (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8023). https://doi.org/10.1117/12.884005

Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT. / Esfahani, Nima Nader; Fredricksen, Christopher J.; Medhi, Guatam et al.
Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense. 2011. 80230R (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Esfahani, NN, Fredricksen, CJ, Medhi, G, Peale, RE, Cleary, JW, Buchwald, WR, Saxena, H & Edwards, OJ 2011, Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT. in Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense., 80230R, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, Orlando, FL, United States, 4/25/11. https://doi.org/10.1117/12.884005

@inproceedings{93719150eab644f6ac7f97979d3a8fea,

title = "Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT",

abstract = "Tunable resonant absorption by plasmons in the two-dimensional electron gas (2DEG) of grating-gated HEMTs is known for a variety of semiconductor systems, giving promise of chip-scale frequency- agile THz imaging spectrometers. In this work, we present our approach to measurement of electrical response to millimeter waves from backward-wave oscillators (BWO) in the range 40-110 GHz for InP-based HEMTs. Frequency-modulation of the BWO with lock-in amplification of the source-drain current gives an output proportional to the change in absorption with frequency without contribution from non-resonant response. This is a first step in optimizing such devices for manportable or space-based spectral-sensing applications.",

keywords = "HEMT, Millimeter wave, Plasmon, Terahertz",

author = "Esfahani, \{Nima Nader\} and Fredricksen, \{Christopher J.\} and Guatam Medhi and Peale, \{R. E.\} and Cleary, \{Justin W.\} and Buchwald, \{Walter R.\} and Himanshu Saxena and Edwards, \{Oliver J.\}",

year = "2011",

doi = "10.1117/12.884005",

language = "English",

isbn = "9780819485977",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Terahertz Physics, Devices, and Systems V",

note = "Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense ; Conference date: 25-04-2011 Through 26-04-2011",

}

TY - GEN

T1 - Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT

AU - Esfahani, Nima Nader

AU - Fredricksen, Christopher J.

AU - Medhi, Guatam

AU - Peale, R. E.

AU - Cleary, Justin W.

AU - Buchwald, Walter R.

AU - Saxena, Himanshu

AU - Edwards, Oliver J.

PY - 2011

Y1 - 2011

N2 - Tunable resonant absorption by plasmons in the two-dimensional electron gas (2DEG) of grating-gated HEMTs is known for a variety of semiconductor systems, giving promise of chip-scale frequency- agile THz imaging spectrometers. In this work, we present our approach to measurement of electrical response to millimeter waves from backward-wave oscillators (BWO) in the range 40-110 GHz for InP-based HEMTs. Frequency-modulation of the BWO with lock-in amplification of the source-drain current gives an output proportional to the change in absorption with frequency without contribution from non-resonant response. This is a first step in optimizing such devices for manportable or space-based spectral-sensing applications.

AB - Tunable resonant absorption by plasmons in the two-dimensional electron gas (2DEG) of grating-gated HEMTs is known for a variety of semiconductor systems, giving promise of chip-scale frequency- agile THz imaging spectrometers. In this work, we present our approach to measurement of electrical response to millimeter waves from backward-wave oscillators (BWO) in the range 40-110 GHz for InP-based HEMTs. Frequency-modulation of the BWO with lock-in amplification of the source-drain current gives an output proportional to the change in absorption with frequency without contribution from non-resonant response. This is a first step in optimizing such devices for manportable or space-based spectral-sensing applications.

KW - HEMT

KW - Millimeter wave

KW - Plasmon

KW - Terahertz

UR - https://www.scopus.com/pages/publications/80052722517

UR - https://www.scopus.com/pages/publications/80052722517#tab=citedBy

U2 - 10.1117/12.884005

DO - 10.1117/12.884005

M3 - Conference contribution

AN - SCOPUS:80052722517

SN - 9780819485977

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Terahertz Physics, Devices, and Systems V

T2 - Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense

Y2 - 25 April 2011 through 26 April 2011

ER -

Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT

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Keywords

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